| Allicdata Part #: | IRFBC20S-ND |
| Manufacturer Part#: |
IRFBC20S |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 600V 2.2A D2PAK |
| More Detail: | N-Channel 600V 2.2A (Tc) 3.1W (Ta), 50W (Tc) Surfa... |
| DataSheet: | IRFBC20S Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta), 50W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 4.4 Ohm @ 1.3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2.2A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IRFBC20S is a type of insulated gate bipolar transistor (IGBT), which is widely used in today\'s electric power system but is more commonly known as a field-effect transistor (FET). It is an important device used in power electronic circuits, such as industrial power conversion systems, motor drives, and solenoid control circuits. It is also widely used in hazardous environments where high electrical and mechanical shock requirements are needed. In this article, we\'ll take a closer look at the application field and the working principles of IRFBC20S.
An IRFBC20S is typically configured as a three terminal device. It consists of a Source (S), a Gate (G) and a Drain (D). The IRFBC20S belongs to the single-phase FET family and is best known for its low-level switching capability and low RDS(on) capability, which makes it suitable for use in high voltage, high current applications. The IRFBC20S has a current rating of up to 20A and a voltage rating of up to 600V while operating in ambient temperatures between -55 °C to +150 °C.
The working principle of the IRFBC20S is based on the PN junction. A variable electric field on its Gate junction changes the PN junction characteristics, thus allowing Transistor action. When the Gate voltage is above the threshold voltage, the transistor is switched on and the voltage across the drain-source region (VDS) is limited by the transistor\'s On-state resistance, R DS(on). When the Gate voltage is below the threshold voltage, the transistor is turned off, and the current through it is almost zero.
The IRFBC20S is typically used in power switching applications such as motor drives, high-voltage DC-DC converters, and AC, DC, and optical power converters. It is also used in solenoid control circuits, high-voltage DC power supplies and other applications where high current, low switch times and low R DS(on) values are required. It is also ideal for use in applications where high transient voltages are generated.
The IRFBC20S is also used in a variety of industrial applications, such as welding machines and catering equipment. It is used in controlling a wide range of electrical apparatus, such as motors, solenoids, and AC, DC, and optical power converters.
In conclusion, the IRFBC20S is a single-phase FET that is widely used in today\'s electric power systems for its low-level switching capability, low RDS(on) values and high current ratings. It is suitable for a variety of applications, including motor drives, high-voltage DC-DC converters, AC, DC and optical power converters, and solenoid control circuits. Its reliable operation and rugged construction make it a good choice for high-powered applications in hazardous environments.
The specific data is subject to PDF, and the above content is for reference
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IRFBC20S Datasheet/PDF