IRFBC30ASPBF Allicdata Electronics
Allicdata Part #:

IRFBC30ASPBF-ND

Manufacturer Part#:

IRFBC30ASPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 3.6A D2PAK
More Detail: N-Channel 600V 3.6A (Tc) 74W (Tc) Surface Mount D2...
DataSheet: IRFBC30ASPBF datasheetIRFBC30ASPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 74W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRFBC30ASPBF is a vertical power MOSFET that belongs to the Transistor-Field Effect Transistor (FETs) & MOSFETs-Single category. It is used in power management applications, especially those in which high current and low on-state resistance are required. Its package size is a 4-pin TO-263 that is a suitable option for space-constrained circuits.

The IRFBC30ASPBF is a N-channel MOSFET and it has an ‘S’ suffix in its name indicating that it is a vertical type MOSFET. The N-channel is created by an n-type substrate, an n-type source and an n-type drain. In order to increase the conduction performance, the channel region is optimized with a recently developed oxidation-resistant surface treatment. The gate region is provided with the same treatment.

Its power rating is 30V, which means that it can handle up to 30 volts in the drain-source region. Its maximum drain current rating is 6A and maximum drain-source on-state resistance is 0.05ohm. Its maximum pulse current is 8A, making it an ideal choice for applications that require high current pulses.

The IRFBC30ASPBF is capable of operating at temperatures starting from -55°C to +150°C. Its gate-source peak voltage withstands up to 20V and gate-drain withstands up to 20V. Its capacitance values are typically 100pF (gate-source), 2pF (gate-drain) and 7pF (source-drain). Finally, its series inductance is some 16.7nH.

The working principle of the device involves the application of a gate voltage (Vgs). When this gate voltage is applied, current starts to flow from the source to the drain. As the voltage is increased, more current is allowed to flow causing an increase in drain current (Id). The relation between Vgs and Id is known as the transfer characteristics. Once the gate voltage is removed, the drain current is reduced to zero.

The IRFBC30ASPBF offers a wide range of applications due to its high current capacity and low on-state resistance. It can be used in high-voltage DC-DC converters, power inverters and power switching applications. It has also found its use in automotive applications such as power window lifts and sound amplifiers, which require high current and low on-state resistance.

The IRFBC30ASPBF epitomizes the ‘form, fit and function’ mantra that many engineers strive for when selecting components for their designs. Its reliable performance and excellent thermal capability provide engineers with a robust solution for their application needs.

The specific data is subject to PDF, and the above content is for reference

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