| Allicdata Part #: | IRFBC30S-ND |
| Manufacturer Part#: |
IRFBC30S |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 600V 3.6A D2PAK |
| More Detail: | N-Channel 600V 3.6A (Tc) 3.1W (Ta), 74W (Tc) Surfa... |
| DataSheet: | IRFBC30S Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta), 74W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 660pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 2.2 Ohm @ 2.2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3.6A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRFBC30S is specifically a type of MOSFET, or metal-oxide semiconductor field-effect transistor, which is a type of transistor that can carry out amplification and switching operations. This type of transistor, sometimes referred to as a depletion mode MOSFET, is based on the principle of capacitance, where a voltage is applied across a semiconductor material’s oxide surface in order to establish and modify a depletion zone or “channel” effect, hence producing a current flow. The IRFBC30S is an n-channel type of MOSFET which is used in a variety of applications.
In terms of its application fields, the IRFBC30S is most often found in use in power management systems; these are circuits that control the power output of a system in order to ensure that the load is supplied with a constant and reliable power level, regardless of the type of load that is being used. The IRFBC30S can be used to provide power control from the primary source all the way through to the output device itself, thus allowing for a greater degree of accuracy, efficiency, and flexibility. The IRFBC30S can also be used in power supply design tasks in order to help minimize the amount of power consumed, thus reducing energy costs.
In terms of its working principle, the IRFBC30S is based on the MOSFET concept, which is an acronym that stands for metal-oxide semiconductor field-effect transistor. As has been mentioned previously, MOSFETs are able to produce and modify a depletion zone effect by applying a voltage across a semiconductor material’s oxide surface; the greater the voltage, the larger the depletion zone and thus, the greater the current flow. This is the principle by which the IRFBC30S operates, and it is used in a wide variety of power management applications.
The IRFBC30S is a very helpful device for controlling levels of power output both accurately and efficiently, and is widely used in electronics design and power management systems. It can help to ensure that whatever kind of device is being powered receives a consistent level of output, which can help to extend the life of the device as well as reduce energy costs. The IRFBC30S is a relatively simple yet effective device which can be used in many different types of systems.
The specific data is subject to PDF, and the above content is for reference
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IRFBC30S Datasheet/PDF