IRFBC30STRL Allicdata Electronics
Allicdata Part #:

IRFBC30STRL-ND

Manufacturer Part#:

IRFBC30STRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 3.6A D2PAK
More Detail: N-Channel 600V 3.6A (Tc) 3.1W (Ta), 74W (Tc) Surfa...
DataSheet: IRFBC30STRL datasheetIRFBC30STRL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRFBC30STRL is one of the many types of Field Effect Transistors, or FETs, available on the market. It is a single MOSFET (a type of FET with only one gate) that is suitable for a wide range of applications but particularly those requiring low gate voltage. It offers a wide range of features, including low resistance and on-resistance, and can be mounted on a board for improved performance and electrical isolation. It\'s also relatively easy to install and requires only a few components. This makes it an ideal choice for small to medium-sized projects.

The IRFBC30STRL is typically used in an array of electrical and digital applications, from auxiliary power supplies to digital logic processing, and from temperature control to motor control and speed regulation. What\'s unique about the IRFBC30STRL is its ability to control current in both directions, meaning that it can be used to toggle signals or even reverse polarity. It can also provide a solid state interface to other components, such as relays and switching systems.

The IRFBC30STRL\'s functionality is based on its internal FETs, which can be compared to a human conductor in an orchestra. Basically, it\'s a tiny device that controls the flow of electrons through the silicon chip using a metal oxide layer separated by an oxide-containing layer, known as a gate. A voltage applied to the gate causes the oxide to become slightly conductive, while the metal oxide layer can block electron flow, stopping the current. This process is known as “channel turning”, and it is the most basic principle behind the IRFBC30STRL’s functionality.

The IRFBC30STRL has two major components: the gate and the drain. The gate controls the voltage applied to the metal oxide layer, and the drain is responsible for controlling the current. When a positive voltage is applied to the gate, it causes electrons that are able to pass through the metal oxide layer to be attracted to the drain, thereby creating a current across the device. When the voltage is removed from the gate, the current stops flowing. This is the basic working principle of the IRFBC30STRL.

One of the main advantages of the IRFBC30STRL is its low power consumption. It can be used in low voltage applications and can also operate in temperatures as low as -40 °C. Its low RDS (on-resistance) makes it an excellent choice for DC-DC converter applications, and its high breakdown voltage makes it a potential choice for applications with high input and output voltage levels. Additionally, its fast switching performance and low input capacitance make it a great choice for switching applications as well as PWM (pulse-width modulation) control.

In conclusion, the IRFBC30STRL is an excellent choice for a variety of applications that require a low gate voltage, low resistance and low on-resistance. Its two main components, the gate and the drain, are responsible for its functionality, and its low power consumption makes it an ideal choice for low voltage applications. Its fast switching performance and low input capacitance make it suitable for a variety of switching applications as well as PWM control.

The specific data is subject to PDF, and the above content is for reference

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