| Allicdata Part #: | IRFBC40A-ND |
| Manufacturer Part#: |
IRFBC40A |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 600V 6.2A TO-220AB |
| More Detail: | N-Channel 600V 6.2A (Tc) 125W (Tc) Through Hole TO... |
| DataSheet: |  IRFBC40A Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 125W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1036pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 3.7A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6.2A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRFBC40A is a silicon N-Channel Power MOSFET that is becoming increasingly popular among radio frequency (RF) design engineers. This MOSFET has outstanding low On state resistance specs, low input capacitance and low gate charge. It is also durable, making it a great choice for high power applications.
RF applications are the primary application field of the IRFBC40A. This silicon power MOSFET is well known for its use in high-power amplifiers, switches, RF mixers, and more. Of course, it can also be used in other types of applications including voltage regulators, voltage level shifters, general purpose digital pulse switches, DC-DC converters, and power supply controllers.
The working principle of the IRFBC40A involves basic electronics principles. This makes the device easy to use for most application purposes. Basically, the device consists of gate, drain, and source terminals. It uses the flow of electricity to stimulate the gate terminal and break down the insulation barrier between the drain and source terminals. This process, known as “punch-through”, is how current is transferred from the drain to the source terminals.
The IRFBC40A exhibits a high level of accuracy and efficiency. This is due to its combination of high on state resistance and low input capacitance specifications. Furthermore, it has a low gate charge, making it a great choice for high power applications. This low gate charge is what leads to the device’s high speed performance.
Due to its impressive ability to generate high power levels at low losses and provide excellent accuracy, the IRFBC40A is a popular choice for RF design engineers. It is a reliable and cost-effective solution that can be used in a wide range of applications. As such, it is no surprise that the device has become so popular in the RF industry.
The specific data is subject to PDF, and the above content is for reference
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