| Allicdata Part #: | IRFBC40ASPBF-ND |
| Manufacturer Part#: |
IRFBC40ASPBF |
| Price: | $ 3.57 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 600V 6.2A D2PAK |
| More Detail: | N-Channel 600V 6.2A (Tc) 125W (Tc) Surface Mount D... |
| DataSheet: | IRFBC40ASPBF Datasheet/PDF |
| Quantity: | 918 |
| 1 +: | $ 3.57000 |
| 10 +: | $ 3.46290 |
| 100 +: | $ 3.39150 |
| 1000 +: | $ 3.32010 |
| 10000 +: | $ 3.21300 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 125W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1036pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 3.7A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6.2A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IRFBC40ASPBF is a high speed and low threshold voltage N-channel MOSFET. It is a reliable, cost effective, and versatile device which is widely used not only in power management systems, but also in various other applications.The applications of IRFBC40ASPBF mainly include DC-DC conversions, motor/actuator control, power management in mobile devices, audio/video amplifiers, power supplies, and UPS systems. This is due to its low on-resistance, low turn on voltage, high switching speed, and high power rating.The operating principle of the IRFBC40ASPBF is simple yet highly efficient. When a voltage is applied to its gate, a current is sent through the voltage source, which then creates an electric field in the device. This electric field causes positive charges (electrons) to be attracted to the MOSFET gate and the source terminal, forming a conductive channel between the source and the drain. Since the electric field is collimated, it helps to control the flow of current without introducing any significant losses along the way.As a result, the IRFBC40ASPBF is able to provide high speeds and low avalanche/reverse recovery times. Moreover, since the device has a low turn-on voltage and high on-state resistance, it is able to withstand high power transients, making it suitable for both AC and DC power applications. Another advantage of the device is its small form factor, which makes it easy to integrate into a variety of systems.Overall, the IRFBC40ASPBF is a great choice for both portable and traditional applications. Its low threshold voltage, low on-state resistance, high switching speed, robust operation, and small form factor make it an excellent choice for a wide range of applications. Furthermore, its versatility and cost effectiveness make it an attractive proposition in many areas.
The specific data is subject to PDF, and the above content is for reference
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IRFBC40ASPBF Datasheet/PDF