Allicdata Part #: | IRFBC40ASTRRPBF-ND |
Manufacturer Part#: |
IRFBC40ASTRRPBF |
Price: | $ 1.93 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 600V 6.2A D2PAK |
More Detail: | N-Channel 600V 6.2A (Tc) 125W (Tc) Surface Mount D... |
DataSheet: | IRFBC40ASTRRPBF Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 1.73772 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1036pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 3.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.2A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRFBC40ASTRRPBF is a type of single P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device. It is a voltage-controlled, field-effect transistor (FET). The device has a drain-source continuous drain current rating of 11A, and it can be used as a switch or amplifier in many applications. It operates in either enhancement or depletion mode, depending on the voltage applied to its gate.
A MOSFET works by utilizing the electrical conductivity of the oxide layer between the source and drain regions of the device. When a voltage applied to the gate electrode creates an electric field, electrons are attracted (or repelled, depending on the direction of the field) from the oxide layer, thereby creating a condutive current path between source and drain regions. This allows for currents as high as 11A to be switched on and off in various applications.
The IRFBC40ASTRRPBF is typically used in low-voltage, low-current applications that require reliable switching and low power consumption, such as power converters, automotive lighting, battery-operated devices, and small home appliances. It can also be utilized in audio and signal processing applications. In most applications, the device works in combination with other components, such as capacitors and resistors, to regulate the current and voltage levels needed for an appropriate operation.
The IRFBC40ASTRRPBF offers several advantages. It is a low-cost transistor and can be easily integrated into an existing circuitry. In addition, it has very low RDS(on) values, which is a measure of the amount of power consumed in a circuit when the device is in its “on” state. The low RDS (on) values ensure that the device consumes minimal power in its “on” state and therefore, provides more efficient operation.
The device is also small and light, which helps make it suitable for a wide range of applications. Furthermore, it is fast-switching and has excellent power-handling capabilities, which makes it suitable for high-frequency switching applications. It is also very reliable and has a long operational life.
In summary, the IRFBC40ASTRRPBF single P-channel MOSFET is an excellent choice for applications that require reliable and low-cost switching. Its robust design, low RDS (on) values, and small size make it versatile in many applications, while its power-handling capabilities and fast switching capability make it suitable for high-frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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