IRFBC40LC Discrete Semiconductor Products |
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| Allicdata Part #: | IRFBC40LC-ND |
| Manufacturer Part#: |
IRFBC40LC |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 600V 6.2A TO-220AB |
| More Detail: | N-Channel 600V 6.2A (Tc) 125W (Tc) Through Hole TO... |
| DataSheet: | IRFBC40LC Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 125W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 3.7A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6.2A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRFBC40LC is an advanced single Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed to reduce power consumption in high frequency switching devices. With its low on-resistance, high frequency operation capability, and advanced silicon technology, this device offers a high performance alternative to other similar devices.The IRFBC40LC is a vertical type MOSFET, which means it is able to provide a wide range of applications. It can be used as an amplifier, switch, or linear amplifier. It also has a low on-resistance which makes it suitable for use in power MOSFET applications, where power efficiency is key. Additionally, it has a high frequency operation capability, meaning it can be used in high-speed switching applications.The IRFBC40LC is designed with an advanced low max RDS(on) technology, which helps to reduce the power consumption of the device. This technology helps make the device more reliable and efficient as it improves the thermal resistance of the device, as well as increasing noise immunity. Its low power dissipation also adds another benefit: it is reliable in applications where cooling needs to be reduced.The working principle of the IRFBC40LC consists of three main elements: the gate voltage, the drain-source voltage and the current flow. Through the control of the gate voltage (Vg) it is possible to control the current flow between the drain and the source. When the gate voltage is below the threshold voltage (Vth) no current will flow between the drain and the source, but when the gate voltage is higher than Vth, current will start to flow.The gate voltage of the device determines the drain-source current. When the gate voltage is low, the device provides a resistive path for the current, meaning less current will flow between the drain and the source, thus creating a low on-resistance. On the other hand, if the gate voltage is high, the device will provide a low resistance path for the current and so more current will flow between the drain and the source, thus creating a high on-resistance.The IRFBC40LC MOSFET is a versatile device which can be used in a wide range of applications. It can be used in motor control systems, DC-DC converters, and load switching applications among other applications, due to its low on-resistance, high frequency operation capability, and advanced low max RDS(on) technology. By taking advantage of its low on-resistance, the device is able to reduce power consumption, thereby increasing the efficiency of the device and the application.
The specific data is subject to PDF, and the above content is for reference
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IRFBC40LC Datasheet/PDF