IRFBC40LCSTRL Allicdata Electronics
Allicdata Part #:

IRFBC40LCSTRL-ND

Manufacturer Part#:

IRFBC40LCSTRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 6.2A D2PAK
More Detail: N-Channel 600V 6.2A (Tc) 125W (Tc) Surface Mount D...
DataSheet: IRFBC40LCSTRL datasheetIRFBC40LCSTRL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRFBC40LCSTRL is a bipolar junction transistor (BJT) based field effect transistor (FET) that is used mostly in industrial and consumer electronics. It is a low current, bottom Vgs transistor, meaning it has low input and output leakage currents and a very low gate capacitance.

The IRFBC40LCSTRL’s operating region can be thought of as two distinct regions, the saturation region and the triode region. In the saturation region, the transistor behaves as a switch, since all of the base current flowing through the transistor is forced to flow through the collector-emitter terminals. This allows the transistor to function as a transistor amplifier and is the reason why it is used in a wide range of applications, from switching circuits to amplifiers, and even more.

In the triode region, the transistor operates in a linear manner. The transistor remains conductive as the input voltage increases, allowing the collector-emitter path to remain conductive up to a certain gate-to-source voltage, known as the pinch-off voltage VP. This behavior allows the transistor to be employed as a constant-current source, voltage source, current limiting, power control, and many other applications.

Typical IC components used with the IRFBC40LCSTRL include resistors, capacitors, and diodes, which are all used to provide an appropriate bias voltage to the base of the transistor. This in turn causes it to operate in the correct mode. For example, a voltage divider with an appropriate resistor ratio and bias voltage applied to the base can cause the IRFBC40LCSTRL to enter the triode region while a pull-up resistor connected to the gate regulates the input current so that it stays within the desired limit.

The IRFBC40LCSTRL is available in both the through-hole and surface-mount packages and conforms to JEDEC and ROHS standards. It is primarily used in low-power circuits, such as laptops, cell phones, and medical equipment, as it can operate at very low currents. This FET is also used in a variety of other industrial applications, including capacitive-current switching, power electronics, and power management.

As the first step in using an IRFBC40LCSTRL, it is important to consider the operating conditions. In order to achieve optimal performance, the operating temperature should be between -40°C and 125°C. High level of bias current will require a higher drain-to-source voltage, while a lower level of bias current will require a lower drain-to-source voltage. It is also important to choose the appropriate packaging type that best suits the application.

The IRFBC40LCSTRL is a popular choice in many industrial and consumer application fields due to its high performance and low cost. Its wide range of applications, low gate capacitance and leakage, and low voltage requirements make it an attractive option for a wide range of electronics projects.

The specific data is subject to PDF, and the above content is for reference

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