| Allicdata Part #: | IRFBC40S-ND |
| Manufacturer Part#: |
IRFBC40S |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 600V 6.2A D2PAK |
| More Detail: | N-Channel 600V 6.2A (Tc) 3.1W (Ta), 130W (Tc) Surf... |
| DataSheet: | IRFBC40S Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta), 130W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 3.7A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6.2A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRFBC40S is a 40V single-N-Channel MOSFET (metal oxide semiconductor field effect transistor). This type of MOSFET is one of the most commonly used types of transistor, and is one of the most difficult components to understand in any electronics project.
In general, MOSFETs are used as switches, allowing current to pass through when a voltage is applied to the gate, as well as amplifiers to increase current gains. The IRFBC40S is no exception, providing both of these functions.
In terms of its application field, the IRFBC40S is primarily used in high-current, low-voltage applications. Its low-voltage capability makes it an excellent choice for controlling current in battery-operating applications. It is also used in audio amplifiers where low noise and linear distortion are required. The device has a high current capability, making it suitable for controlling high-current devices such as motors, solenoids, and LEDs.
The IRFBC40S has a very simple working principle. When no voltage is applied across the drain-to-source (D-S) terminals, the device is in an "off" state. When voltage is applied across the D-S terminals, a gate voltage is needed to induce current flow, or "turn on" the device. Once the gate voltage is applied, the device will allow current to flow from the drain to the source.
The IRFBC40S is capable of controlling large currents and voltages, making it a great choice for many applications. It is an ideal choice when low-voltage, low-noise, high-current characteristics are required. It is also an excellent choice for power management applications, as its low-voltage capability allows for more efficient use of available power.
When testing the device, it is important to make sure its gate voltage is set correctly. This voltage will determine how well the device turns on and off. Too low a voltage can cause the device to fail, while too high a voltage can cause device failure as well. Care must also be taken to avoid exceeding the rated drain-to-source voltage. If this voltage is exceeded, the device may be damaged and can no longer be used.
Overall, the IRFBC40S is an incredibly versatile transistor, often used in low-voltage, low-noise, high-current applications. Its simple working principle makes it easy to understand and use in any project. With careful testing, it can be a highly reliable component in any circuit.
The specific data is subject to PDF, and the above content is for reference
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IRFBC40S Datasheet/PDF