IRFBC40STRL Allicdata Electronics
Allicdata Part #:

IRFBC40STRL-ND

Manufacturer Part#:

IRFBC40STRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 6.2A D2PAK
More Detail: N-Channel 600V 6.2A (Tc) 3.1W (Ta), 130W (Tc) Surf...
DataSheet: IRFBC40STRL datasheetIRFBC40STRL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRFBC40STRL is a voltage-controlled field effect transistor (FET) from International Rectifier (IR). It is a low-voltage device used in a variety of applications, including power management, signal generation and signal processing.

The device is a single-gate general-purpose FET with a breakdown voltage of 40V, an on-state resistance of 4.0 Ohms, and a maximum continuous current rating of 15A. Its applications include level shifting, voltage regulation, load switching and audio signal processing. It is also used in switched-mode power supplies, as well as automotive and networking applications.

The IRFBC40STRL is a unipolar junction device, which means that it is constructed of two layers of doped semiconductor material that form a p-n junction. The drain-source channel is formed when a voltage is applied to the gate, allowing current to flow from the source to the drain. This transistor is a junction field-effect transistor (JFET), meaning that its gate is connected to the channel through an electric field and does not require a separate current supply.

The primary benefit of the IRFBC40STRL is its extremely low gate-source threshold voltage, which allows for forgiving operation, and its other outstanding features, such as its high input impedance, high immunity to corrosion and low gate-source capacitance. Additionally, the device has excellent switching performance, with a fast response, low capacitance and low power consumption.

The IRFBC40STRL is a single-gate FET with a relatively low gate-source voltage. It is a popular choice for low-voltage applications in which low current levels need to be switched, or voltage levels need to be regulated. It is also well-suited for medium-voltage applications in which higher load currents need to be controlled, such as audio signal processing or power-supply control.

The device is also commonly used in linear applications, such as in level-shifting circuits and in switching circuits for signal generation, signal processing, power management and switching power supplies. Furthermore, the device is well-suited for use in automotive, networking and other applications in which current levels need to be regulated.

The IRFBC40STRL is a versatile, low-power device that can be used in a variety of applications. Its extremely low gate-source voltage threshold and high input impedance make it well-suited for applications in which a high level of precision and reliability are required. Its low power consumption and excellent switching performance also make it an attractive option for applications in which power efficiency is critical.

The specific data is subject to PDF, and the above content is for reference

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