
Allicdata Part #: | IRFBE30SPBF-ND |
Manufacturer Part#: |
IRFBE30SPBF |
Price: | $ 2.56 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 800V 4.1A D2PAK |
More Detail: | N-Channel 800V 4.1A (Tc) 125W (Tc) Surface Mount D... |
DataSheet: | ![]() |
Quantity: | 979 |
1 +: | $ 2.56000 |
10 +: | $ 2.48320 |
100 +: | $ 2.43200 |
1000 +: | $ 2.38080 |
10000 +: | $ 2.30400 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 78nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.1A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRFBE30SPBF is a type of Power MOSFET that is widely used in various areas. Compared with other MOSFETs, IRFBE30SPBF has superior power rating due to its optimized design and high-performance materials. This article will give an overview of IRFBE30SPBF application field and working principle.
Application Field of IRFBE30SPBF
In the field of power management, IRFBE30SPBF is especially suitable for applications such as AC/DC converters, DC/DC converters, switching power supplies, and motor drives. The built-in protection feature makes it suitable for a wide range of applications. It also allows for high switching current and fast switching operation, making it ideal for high-frequency or low-noise applications. Additionally, it is suitable for operating in harsh environments due to its enhanced thermal performance. IRFBE30SPBF is also suitable for applications in digital circuits since it offers low on-resistance and low switching noise.
In the automotive industry, IRFBE30SPBF is mainly used in the electric control system of vehicles, such as electric windows, power seats, power mirrors, and sunroofs. It is also used in many charging systems, battery management systems, cruise control systems, and anti-lock braking systems. It is ideal for these applications because of its low power consumption, low on-resistance and high input-output inter-channel isolation. In addition, IRFBE30SPBF provides superior reverse polarity capability, making it more suitable for use in applications such as vehicle electric circuits.
Working Principle of IRFBE30SPBF
IRFBE30SPBF is a n-channel power MOSFET with a metal-oxide-semiconductor (MOS) structure. The metal gate of the MOS is connected to the drain of the MOSFET. When the gate is connected to a positive voltage, electrons in the channel are attracted to the gate and the channel is filled with majority carriers, allowing current to flow from the drain to the source. When the positive voltage is removed from the gate, the majority carriers are no longer attracted to the gate and the channel is emptied, blocking the current.
IRFBE30SPBF features two separate channels of operation, which can be operated independently to achieve different levels of readiness and output current level. For example, in an AC/DC converter, the two channels could be used to control the output voltage. The first channel could be used to turn the power supply on or off, while the second channel could be used to adjust the output voltage level.
The on-resistance of IRFBE30SPBF is lower than that of other MOSFETs. This means that the MOSFET has a higher power dissipation capability, allowing it to handle higher current density. Additionally, it has low capacitance and low gate charge, which helps reduce switching losses. The combination of these features makes IRFBE30SPBF ideal for high-frequency applications.
Conclusion
IRFBE30SPBF is an ideal Power MOSFET for a variety of applications. Its superior power rating, combined with its low power consumption, low on-resistance and high input-output inter-channel isolation makes it suitable for use in power management and automotive applications. Furthermore, it has two separate channels of operation and excellent thermal performance, making it ideal for high-frequency or low-noise applications. Finally, its low capacitance and gate charge reduces switching losses and allows it to operate at higher current density.
The specific data is subject to PDF, and the above content is for reference
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