IRFBE30STRR Allicdata Electronics
Allicdata Part #:

IRFBE30STRR-ND

Manufacturer Part#:

IRFBE30STRR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 800V 4.1A D2PAK
More Detail: N-Channel 800V 4.1A (Tc) 125W (Tc) Surface Mount D...
DataSheet: IRFBE30STRR datasheetIRFBE30STRR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3 Ohm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRFBE30STRR is a bit of a mouthful so it’s more commonly referred to as the IRFBE30. It’s an N-channel power MOSFET transistor made by Infineon Technologies that can handle an average current of 5.6A (with a maximum of 8.0A). As a stand-alone device, the IRFBE30 is an enhancement type MOSFET with a drain-source breakdown voltage of 30V, an operating temperature range of -55℃ to +175℃ and a gate threshold voltage of 4.5V.

The MOSFET (which stands for Metal Oxide Semiconductor Field Effect Transistor) is a type of transistor that is used for switching and/or amplifying electronic signals. MOSFETs are commonly used in digital and analog circuit design, power management, signal processing, and communications systems.

The IRFBE30 is an N-channel enhancement type MOSFET, meaning it has a gate voltage of 0 volts and it is typically used as a low-side switch. When the gate is connected to the source, the channel between source and drain opens, conducting current and allowing the device to switch on. When the gate voltage is removed, the channel between source and drain is closed and the device switches off.

The IRFBE30 can be used in a variety of applications, including motor control (H-bridge topologies), DC/DC and AC/DC converters, load switching and other switching and controlling applications.

In applications that require high-current switching, the IRFBE30 is an ideal choice due to its high peak current capability (8A) and low input capacitance (7.4pF). As an enhancement type MOSFET, the IRFBE30 does not require a gate voltage to operate, meaning it can turn on quickly and switch off quickly, resulting in increased system efficiency.

The design of the device is such that the gate-source voltage (Vgs) is always greater than the threshold voltage (Vth) of the device. This ensures that the device will not be damaged or overloaded as the voltage across the gate and source is always small enough to allow the transistor to conduct current efficiently.

The IRFBE30 is a robust and reliable device, making it a popular choice for applications such as motor control, AC/DC converters, and DC-DC conversion. Its high peak current capability and low input capacitance make the device suitable for high-current switching applications, while its robustness and reliability make it a great choice for circuit design.

The specific data is subject to PDF, and the above content is for reference

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