| Allicdata Part #: | IRFBF30STRL-ND |
| Manufacturer Part#: |
IRFBF30STRL |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 900V 3.6A D2PAK |
| More Detail: | N-Channel 900V 3.6A (Tc) 125W (Tc) Surface Mount D... |
| DataSheet: | IRFBF30STRL Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 125W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 78nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 3.7 Ohm @ 2.2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3.6A (Tc) |
| Drain to Source Voltage (Vdss): | 900V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The IRFBF30STRL is a power metal-oxide-semiconductor field effect transistor (MOSFET). It belongs to the Single FETs category, which is one of the four subclasses in the FETs (Field Effect Transistors) category. FETs are unipolar devices that are usually used as switches in electrical circuits and are mainly used in amplification circuits and switching circuits.
The IRFBF30STRL is designed to handle up to 30A of current as well as 600V of drain-source voltage. It has a maximum power dissipation rating of 250 W and has an operating junction temperature of -55°C to 175°C. It is a 30 V, 7 mOhm, ½-inch-diameter N-channel MOSFET transistor with an integral heat sink. With a very low on-resistance and outstanding thermal performance, it is ideal for high power switching applications.
A MOSFET is a three-terminal semiconductor device that operates by the flow of both electrons and holes, typically used as a digital switch and as a voltage-controlled current source. It is made up of a gate, a source and a drain, each of which is either n- or p-doped. When the gate is positive, holes are attracted to it and electrons are repelled to the source, allowing the MOSFET to act as a switch. In other words, when the gate voltage applied to the gate exceeds the threshold voltage, the gate, source and drain form a conducting channel, allowing current flow.
The MOSFET is primarily used for switching applications, where it is generally configured in the “on” position when there is a low voltage applied across the gate and source. When a higher voltage is applied to the gate, the current flowing through the channel is turned off. This is why the MOSFET is often referred to as an "analog switch". In addition, the MOSFET can be used in linear applications, such as voltage amplifiers, current sources and signal generators.
The IRFBF30STRL is designed to offer low RDS(on) values, allowing for low power loss in high-current applications such as motor control and power supply systems. The low RDS(on) values result in higher efficiency and less heat dissipation, and thus reduced power consumption. This makes it a great fit for applications that require high current in a small package, such as automotive and telecommunications.
In conclusion, the IRFBF30STRL is a great choice for high power switching applications. It provides excellent thermal performance, low on-resistance, and high current capabilities, making it ideal for a wide variety of applications in the automotive, telecommunications, and power management industries. Its features make it a great option for any application that requires high power switching.
The specific data is subject to PDF, and the above content is for reference
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IRFBF30STRL Datasheet/PDF