| Allicdata Part #: | IRFD024-ND |
| Manufacturer Part#: |
IRFD024 |
| Price: | $ 1.40 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 60V 2.5A 4-DIP |
| More Detail: | N-Channel 60V 2.5A (Ta) 1.3W (Ta) Through Hole 4-D... |
| DataSheet: |  IRFD024 Datasheet/PDF |
| Quantity: | 1000 |
| 2500 +: | $ 1.26230 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | 4-DIP (0.300", 7.62mm) |
| Supplier Device Package: | 4-DIP, Hexdip, HVMDIP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 1.3W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 640pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 100 mOhm @ 1.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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The IRFD024 is a very popular field effect transistor that is used in many electronic devices, such as amplifiers and signal conditioning equipment. It is capable of withstanding high voltages and current, making it a great choice for high wattage applications. In this article, we will discuss the IRFD024 application field and its working principle.The IRFD024 is a N-channel enhancement-mode power MOSFET that can handle voltages up to 12V and currents up to 1A with its ruggedness and good size. It is a popular choice for its low on-resistance and good ESD performance. The IRFD024 is used in many applications, including switching, DC-DC converter circuits, linear amplifiers, audio amplifiers, and power supplies.The IRFD024 is an N-channel MOSFET, which means it has an N-type substrate, which means it has electrons as the majority carriers in the channel region. This allows it to switch higher current than a similar P-channel MOSFET because the electrons travel faster than the holes. The threshold voltage of the IRFD024 is 4V, which is the voltage required to switch on the device and allow current to flow. The saturated drain-source current of the device can reach up to 1A, making it suitable for many applications. The maximum gate-source voltage (Vgs) is usually between 8V and 12V.The gate of the IRFD024 is the control element and is used to switch the device on and off. A high voltage or current can be applied to the gate terminal and the output connected to the drain. When a current is applied to the gate, it induces a voltage in the channel, causing the electrons to move from the substrate to the gate, creating a conductive path between source and drain. This allows current to flow from source to drain. When the gate voltage is reduced, the electrons are forced back to the substrate and the current path is broken, thus turning the device off.The IRFD024 can be used for many applications including motor control, voltage converters, inverters and Buck converters. The device is also suitable for high switching frequency applications such as class D amplifiers, audio amplifiers and power supplies.In summary, the IRFD024 is a very popular field effect transistor that is used in many electronic devices, such as amplifiers and signal conditioning equipment. It is a N-channel MOSFET that can handle voltages up to 12V and currents up to 1A with its ruggedness and good size. The gate is the control element and is used to switch the device on and off. The IRFD024 is used in many applications, including switching, DC-DC converter circuits, linear amplifiers, audio amplifiers, and power supplies.
The specific data is subject to PDF, and the above content is for reference
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