IRFD9024 Allicdata Electronics
Allicdata Part #:

IRFD9024-ND

Manufacturer Part#:

IRFD9024

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 60V 1.6A 4-DIP
More Detail: P-Channel 60V 1.6A (Ta) 1.3W (Ta) Through Hole 4-D...
DataSheet: IRFD9024 datasheetIRFD9024 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 280 mOhm @ 960mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRFD9024 Application Field and Working Principle

The IRFD9024 is a silicon single N-Channel power MOSFET (Metal Oxide Semiconductor Field-Effect Transistor), specifically manufactured for low/medium voltage applications in modern power technology. This type of transistor provides many advantages over traditional bipolar transistors, and can help to optimize the overall performance of a circuit. This article will provide a concise overview of the application field of the IRFD9024, as well as the working principle of such devices.

Application Field of IRFD9024

The IRFD9024 is commonly used in various switch mode power applications, such as frequency converters and DC-DC converters. It can be used to drive RGB LED lights, and is also suitable for use in motor control applications. In addition, this MOSFET is also well-suited for a variety of high current and low resistance switching applications, such as those found in home appliances.

Working Principle

MOSFETs, such as the IRFD9024, utilize a special P-N junction instead of a traditional transistor\'s base-emitter junction. This P-N junction works in conjunction with a "gate" to allow or prevent current from flowing from the device\'s drain to its source. The voltage applied to the gate determines whether the transistor is in an "on" or "off" state, which is known as the transistor\'s threshold voltage. When a voltage is applied to the gate, it attracts electrons from the source, which causes a current to flow between the source and the drain.

The IRFD9024 is specially designed to operate at low voltages, which makes it ideal for applications where lower energy consumption is desired. It also features a wide operating temperature range of -40°C to 175°C, making it suitable for use in extreme environments. Additionally, the reverse avalanche and dv/dt characteristics of the IRFD9024 also ensure good protection for both the device and the rest of the circuit.

Conclusion

To summarize, the IRFD9024 is a low/medium voltage single N-Channel power MOSFET, suitable for use in a variety of switch mode applications. It provides a number of advantages over traditional bipolar transistors, most notably its lower power consumption, wide operating temperature range, and good reverse avalanche and dv/dt characteristics. By utilizing the transistor\'s gate-controlled P-N junction operation, a user is able to take advantage of the device\'s potential for excellent circuit performance.

The specific data is subject to PDF, and the above content is for reference

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