| Allicdata Part #: | IRFD9120-ND |
| Manufacturer Part#: |
IRFD9120 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 100V 1A 4-DIP |
| More Detail: | P-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DI... |
| DataSheet: | IRFD9120 Datasheet/PDF |
| Quantity: | 300 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | 4-DIP (0.300", 7.62mm) |
| Supplier Device Package: | 4-DIP, Hexdip, HVMDIP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 1.3W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 390pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 600 mOhm @ 600mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IRFD9120 is a type of depletion-mode Power MOSFET, developed by International Rectifier, which offers a large array of benefits due to its advanced design. It offers an extremely low on-resistance of only 0.6 ohm, high current handling capabilities at up to 100A, and a low thermal resistance of only 3.2 K/W. Additionally, the device is very compact in size and is available in the popular TO-220 package.
Power MOSFETs are used in applications that require high-power switching. They are used for AC or DC voltage switching and as amplifiers for high-power signals such as audio, video, and radio signals. The IRFD9120 can be used for a wide range of high-power applications, including power switching in motor control, power management, and DC/DC conversion. In addition, the device is well-suited for use as switching transistors in audio amplifiers, fluorescent ballast, and other data-processing systems.
The operation of a Power MOSFET is based on the principle of charge transfer between source and drain. When a small voltage is applied to the gate, a conductive channel is created in the substrate, allowing electrons to move from the source to the drain. As the voltage on the gate increases, the current through the channel increases as well, allowing higher currents to flow through the device. The IRFD9120 is capable of handling currents up to 100A, making it ideal for high-power applications.
The IRFD9120 has several features that makes it an excellent choice for power switching applications. It has an exceptionally low on-resistance of only 0.6 ohm, which reduces power dissipation and ensures efficient conduction of currents. In addition, the device has a low thermal resistance of 3.2 K/W, which helps to reduce heat dissipation from the MOSFET, resulting in cooler operation and lower power consumption. The device is rated for a maximum voltage of 200V, and can handle up to a 100 Amps of current, making it suitable for a variety of applications.
The IRFD9120 is an ideal choice for any application requiring high-power switching and can be used in a variety of applications. It has an exceptionally low on-resistance, high current handling capabilities, and a low thermal resistance, making it an attractive choice for AC or DC voltage switching and as amplifiers for high-power signals. In addition, its low power dissipation helps to reduce heat dissipation, resulting in cooler operation and lower power consumption. Additionally, the device is very compact in size and is available in the popular TO-220 package.
The specific data is subject to PDF, and the above content is for reference
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IRFD9120 Datasheet/PDF