IRFD210 Allicdata Electronics
Allicdata Part #:

IRFD210-ND

Manufacturer Part#:

IRFD210

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 200V 600MA 4-DIP
More Detail: N-Channel 200V 600mA (Ta) 1W (Ta) Through Hole 4-D...
DataSheet: IRFD210 datasheetIRFD210 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 360mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRFD210 application field and working principle

IRFD210 is an extremely popular and widely used integrated MOSFET, belonging to the single type of MOSFETs. It is produced and distributed by International Rectifier, a world leader in power supply and energy management solutions. The IRFD210 has been used in a variety of devices due to its particular properties and wide range of available applications.

These MOSFETs offer high performance in devices that need to control voltage, current, and frequency. Such devices include high-end audio systems, modems, motors, power switches, and other small to medium regulated systems. The IRFD210’s most common application is in power supplies, as it can provide steady power levels that are essential for electronic components to function properly.

The IRFD210 MOSFET is designed with a high-lethal switching element known as the S-MOSFET or Side-channel MOSFET. This element can be powered by normal or low-voltage electrical current, and its main purpose is to conduct and switch among various currents. The main feature of this device is its ability to control power quickly and intelligently.

The IRFD210 MOSFET has a low ON-resistance, which means that even when the power is off, there is still some voltage flowing in it. This is advantageous as it allows for fast switching and less power wastage and heat generation. Furthermore, it has an excellent gate-source voltage rating, which allows it to control higher currents. It is also capable of handling larger power levels, making it a versatile and powerful device.

The working principle of the IRFD210 is based on its S-MOSFET element; this element is responsible for handling voltage, current, and frequency levels of components connected to the MOSFET. First, the S-MOSFET allows for a low power consumption as it only consumes 1/10TB of power. Then, when the voltage, current, and other predetermined levels exceed certain values, they are immediately detected by the S-MOSFET, which then switches on the control system to regulate these levels.

The IRFD210 MOSFET is relatively easy to use, and its ability to handle high power and low current makes it suitable for a wide range of applications, ranging from high-end audio systems to electricity supplies. Due to its properties, it is often preferred over alternative MOSFETs, as it is more reliable and efficient. It is one of the most commonly used MOSFETs, and its popularity is only expected to grow in the coming years.

The specific data is subject to PDF, and the above content is for reference

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