IRFDC20 Allicdata Electronics
Allicdata Part #:

IRFDC20-ND

Manufacturer Part#:

IRFDC20

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 320MA 4-DIP
More Detail: N-Channel 600V 320mA (Ta) 1W (Ta) Through Hole 4-D...
DataSheet: IRFDC20 datasheetIRFDC20 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 190mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRFDC20 is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) that belongs to the single-gate class. It is used in many applications, such as power switching and linear operations. In this article, we will discuss the application field and working principle of IRFDC20.

Application Field:

IRFDC20 is widely used in power management and power switching applications, such as power supplies, converters, and motor drivers. It can also be used in linear operation, such as audio amplifiers. It is suitable for use in high-temperature environments, as it can operate at temperatures up to 175 °C.

In power switching applications, the IRFDC20 is typically used to switch large currents in small packages, due to its low on-resistance and low gate-source voltage. It can also perform high-frequency switching, which makes it ideal for switching power supplies, converters and motor drivers. In audio amplifiers, the high input impedance and low on-resistance of the IRFDC20 make it ideal for controlling the current source and power flow of the amplifier.

Working Principle:

The IRFDC20 is composed of two N-channel MOSFET channels, connected in parallel and with a single gate electrode. A voltage is applied to the gate electrode, which in turn changes the current flowing through the device. The MOSFETs allow currents to flow between their source and drain pins when a voltage is applied to their gate, and the current will increase as the voltage applied to the gate increases. The current that can flow through the MOSFET is limited by the power rating of the device.

When the voltage applied to the gate is increased, the current flowing through the MOSFET increases along with it. As the current through the MOSFET increases, the drain-to-source voltage drop increases, which is known as the “on-resistance” of the MOSFET. The on-resistance of the IRFDC20 is very low, which makes it ideal for controlling large currents in small packages, and switching large loads quickly.

When the voltage applied to the gate is decreased, the current flowing through the MOSFET is reduced and the drain-to-source voltage also decreases. This is known as the “off-resistance”, and the IRFDC20 has a very low off-resistance, which makes it ideal for use in audio amplifiers, as it can control the current source and power flow of the amplifier.

Conclusion:

The IRFDC20 is a MOSFET that is used in a variety of applications, such as power switching and linear operations. Its low on-resistance and high input impedance make it ideal for controlling large current in small packages, and switching large loads quickly. Its low off-resistance also makes it ideal for use in audio amplifiers, as it can control the current source and power flow of the amplifier.

The specific data is subject to PDF, and the above content is for reference

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