IRFD9110

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	4-DIP (0.300", 7.62mm)
Supplier Device Package:	4-DIP, Hexdip, HVMDIP
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	1.3W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	200pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	8.7nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	1.2 Ohm @ 420mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	700mA (Ta)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tube

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IRFD9110 application field and working principle

The IRFD9110 is a Dual N-Channel Enhancement-Mode Field-Effect Transistor (FET). It is a monolithic device with high breakdown voltage, low total gate charge, and fast switching capability. This functional and versatile device is used in a wide variety of applications, such as in power switching, protection, and control.The IRFD9110 is a robust, dual N-Channel enhancement-mode MOSFET, designed to operate from either a 5V or a 3V supply. It offers high maximum drain-source-leakage current, high maximum avalanche current, and low on-resistance. This device can operate in both depletion and enhancement mode and has fast switching speed. It is suitable for use in medium-power, high-side and low-side switching applications.The IRFD9110 working principle is based on the principle of the field-effect, which is the electric field control of the current in a semiconductor device. When there is a voltage applied to the gate, the charge accumulation or depletion in the channel region changes, modulating the current flow between the drain and the source. This is known as the field effect, which is used in the operation of the MOSFET.The IRFD9110 is an enhancement-mode device, and hence requires a minimum threshold voltage to turn the MOSFET \'on\'. The threshold voltage is the minimum voltage that must be applied to the gate of the device in order to turn the MOSFET \'on\'. This threshold voltage is typically referred to as VT.The drain current (ID), flows through the channel and is influenced by the voltage applied to the gate relative to the source. If the voltage applied to the gate is less than the threshold voltage (VT), then the device does not conduct current and the MOSFET is in the \'off\' state. If the voltage applied to the gate is greater than the threshold voltage (VT), then the device does conduct current and the MOSFET is in the \'on\' state. The gate-to-source voltage (VGS) controls how much current flows from drain to source. The higher the VGS beyond the threshold voltage, the more current that will be allowed to flow, and this can be controlled by varying the gate voltage. The gate voltage can be supplied externally or can be generated internally by a charge pump.The IRFD9110 can handle high reverse drain-source voltage (VDS) and provides high drain-source breakdown voltage capabilities. This makes it suitable for use in high-side switching applications, where the drain is connected to the load, and latter is typically a higher voltage than the supply.The IRFD9110 can also be used in low-side switching applications, where the source is connected to the load, and typically to a ground plane. By applying a gate voltage that is lower than the threshold voltage, a low gate capacitance and a fast turn-on time are achieved, allowing for a low input power consumption and high switching speeds. This makes it suitable for use in portable applications.In summary, the IRFD9110 is a robust, dual N-Channel enhancement-mode MOSFET. Its advantages include high maximum drain-source-leakage current, high maximum avalanche current, and low on-resistance. This device can operate in both depletion and enhancement mode and has fast switching speed. It is suitable for use in medium-power, high-side and low-side switching applications.

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