IRFD9220PBF

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IRFD9220PBF Application Field and Working Principle

The IRFD9220PBF is a single n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) from IrFET that is designed to be used in low-side switching applications. It is extensively applied in motor control, voltage-fed applications, and earth leakage protection as well as controlling other types of loads and switching solenoid and ‘ON/OFF’ relay coils.

This device is constructed using Boronphosphorus silicon epitaxial substrate and self-aligned gate technology. It is suitable for reliable operations in applications of lower withstand voltages and offers a higher current rating and lower R_DS(on). It is machined in a 2 mm x 2.35 mm super power SOT-223 package.

Working Principle

The operating principle of the IRFD9220PBF is not dissimilar from other MOS transistors. Its conductance is determined by the voltage applied between the gate and source. When the gate-source voltage, V_GS goes above a certain threshold voltage V_TH, strong inversion occurs and a negligible channel resistance is then presented from the Source to Drain. This ensures the device acts as a high-speed switch and follows the analytical description of an ideal MOSFET.

When a positive V_GS is applied, a channel of electrons is created in the p-type substrate. This creates a strong inversion as the electrons in the channel are repelled by the gate voltage and shifted further away from the gate region. This creates a channel with a low resistance, limiting the conduction current of the device and rendering the MOSFET as a low resistance switch.

On the other hand, when V_GS approaches 0 V the channel can become wider, leading to greater resistance. This resistance can be minimized by increasing V_GS to higher values.

Applications

The IRFD9220PBF is well-suited for use in low-side switch applications and is applied in motor control, voltage-fed applications, earth leakage protection, and controlling other types of loads and switching solenoid and ‘ON/OFF’ relay coils. Moreover, it can be used in a low-power application such as switching signal sources, signal-conditioning circuits, amplifier circuits, and power supplies.

This device is designed for use in systems that operate at a maximum of 18 V and at temperatures ranging from -55 °C to 150 °C. It features extremely low gate charge and low on-state resistance, making it an ideal choice for many low-side applications. The IRFD9220PBF also has a guaranteed drain-source dV/dt of 200 V/ns and a guaranteed Leakage Current of 1 mA (maximum).

Conclusion

The IRFD9220PBF is an N-channel MOSFET designed for low voltage, low-side switching applications. It is constructed using Boronphosphorus silicon epitaxial substrate and self-aligned gate technology and is machined in a 2 mm x 2.35 mm super power SOT-223 package. It is well-suited for motor control, voltage-fed applications, earth leakage protection, and controlling other types of loads and switching solenoid and ‘ON/OFF’ relay coils. With its extremely low gate charge and low on-state resistance, the IRFD9220PBF is able to offers excellent performance in numerous low-power applications.

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