| Allicdata Part #: | IRFD110PBF-ND |
| Manufacturer Part#: |
IRFD110PBF |
| Price: | $ 0.62 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 100V 1A 4-DIP |
| More Detail: | N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DI... |
| DataSheet: |  IRFD110PBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.61740 |
| 10 +: | $ 0.58502 |
| 100 +: | $ 0.53748 |
| 1000 +: | $ 0.45598 |
| 10000 +: | $ 0.29168 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | 4-DIP (0.300", 7.62mm) |
| Supplier Device Package: | 4-DIP, Hexdip, HVMDIP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 1.3W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 180pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 8.3nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 540 mOhm @ 600mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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IRFD110PBF is a type of single-channel enhancement mode N-channel Metal Oxide Semiconductor Field-effect Transistor (MOSFET). It is designed for use in high current switching and linear applications. It has low gate-source threshold voltage and low drain-source ON resistance making it suitable for a range of high current switching and linear applications. IRFD110PBF has an integrated Source-Gate voltage level translator and integrated ESD protection circuitry making it a cost-effective and reliable solution for a range of switching and linear applications. It is important to understand the electrical and physical operating principles of IRFD110PBF to ensure a safe and efficient operation. This article will explain the working principle and application fields of the IRFD110PBF.PropertiesIRFD110PBF has the following properties:- Voltage: 0 to 100V
- Drain-Source On Resistance: 0.89,Ohm
- Gate-Source voltage: -4.0 to -12V
- Source-Drain breakdown voltage: 100V
- Power Dissipation: 1.0W
The specific data is subject to PDF, and the above content is for reference
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