IRFD420 Allicdata Electronics
Allicdata Part #:

IRFD420-ND

Manufacturer Part#:

IRFD420

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 500V 370MA 4-DIP
More Detail: N-Channel 500V 370mA (Ta) 1W (Ta) Through Hole 4-D...
DataSheet: IRFD420 datasheetIRFD420 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3 Ohm @ 220mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 370mA (Ta)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFD420 is a fast and efficient field-effect transistor that belongs to a single MOSFET family. It is commonly used as a power amplifier, voltage regulator and high-voltage load switch. Understanding the IRFD420 application field and working principle is essential in the designing of higher-performance electronic systems. This article will provide an overview of the IRFD420 application field, advantages, and working principle for both novice and experienced designers.

Application Field

The IRFD420 is especially well-suited for power duties, such as in high-voltage switches, DC-DC converters, and audio amplifiers. The device can be trusted to handle up to 500V reverse drain-source breakdown. This makes the IRFD420 suitable for switching application in high-voltage configurations like the AC-DC power-factor correction (PFC) circuit. In automotive applications, the IRFD420 is often used in DC-DC converters, to control the access of media players, and to accurately regulate a motor’s speed in variable-speed fans.

The device also has excellent thermal-performance characteristics making it well suited for powers applications such are Class-A single-ended amplifiers, Class-D audio amplifiers, and other power converters. For example, the low RDS(on) of the IRFD420 makes it ideal for high-efficiency designs for switched-mode power supplies and DC-DC converters. Its high-speed switching capability and excellent switching-characteristics make it well suited for motion control and low-frequency inverters. Beyond its switching and power-handling capabilities, the IRFD420 can also be used as a high-voltage step-down regulator in active clamp applications.

Simply put, the IRFD420 is a versatile and efficient solution for a variety of power applications. Its ability to handle high voltage, low power dissipation, and high-speed switching capabilities makes it an excellent device for motion control, switching, and audio applications.

Advantages

The IRFD420 offers several advantages over other transistors, making it the ideal choice for many applications. First, the device has an unusually high voltage capability, which allows it to be used in applications where high voltage is present. Second, the device offers low forward-voltage drop and low switching losses, allowing it to efficiently switch high currents in medium- and low-voltage circuits. Finally, it has a high speed, enabling it to switch rapidly and reduce mechanical stresses on relays and other switching components.

The device also offers a significant level of flexibility. The IRFD420 is available in a variety of packages, from small surface-mount devices to large MOSFETs. It also has the ability to be easily driven by a range of microcontrollers, making it suitable for digital and analog applications. The device is also inexpensive, making it an ideal choice for cost-sensitive designs.

Working Principle

The IRFD420 operates as a single MOSFET, meaning it features a thin layer of gate insulating material positioned between two electrodes, a source and a drain. Source and drain terminals are connected to the transistor gate is connected to the ground. This means that when a gate voltage is applied, the transistor acts as an electronic shutoff switch and allows current to flow through the drain and source terminals.

The transistor’s high voltage capability and low-RDS(on) make it especially suitable for power applications. By increasing the gate voltage, current can be shut off more quickly due to the thin gate oxide layer. This allows the transistor to switch at high speeds and reduces the losses in the system. Additionally, the high voltage capability of the IRFD420 allows it to be used in high-voltage power applications and switch high currents with low power dissipation.

In summary, the IRFD420 is an excellent choice for high voltage and power applications. Its high voltage capability, low-RDS(on), and flexibility make it ideal for cost-sensitive, high efficiency designs. Its speed and low switching losses allow it to be used in applications where high frequencies and high currents are present. Understanding the application, advantages, and working principle of the IRFD420 is essential for the successful designing of electronic systems.

The specific data is subject to PDF, and the above content is for reference

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