| Allicdata Part #: | IRFD113PBF-ND |
| Manufacturer Part#: |
IRFD113PBF |
| Price: | $ 0.76 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 60V 800MA 4-DIP |
| More Detail: | N-Channel 60V 800mA (Tc) 1W (Tc) Through Hole 4-HV... |
| DataSheet: |  IRFD113PBF Datasheet/PDF |
| Quantity: | 1000 |
| 2500 +: | $ 0.68465 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | 4-DIP (0.300", 7.62mm) |
| Supplier Device Package: | 4-HVMDIP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 200pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 800 mOhm @ 800mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 800mA (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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.IRFD113PBF is a field-effect transistor (FET) that belongs to the single family of MOSFETs. It is a high-power, low-voltage transistor with a complete package design and superior reliability. It has a doping structure that makes it suitable for medium to high-voltage applications.
The IRFD113PBF is a medium power n-channel enhancement mode field effect transistor (FET) with a exceptionally low gate threshold voltage. The current rating of this device is as high as 4.7V. It features excellent on-resistance and high switching speed, making it ideal for a wide range of applications. Its robust design provides a high degree of reliability, making it suitable for high-powered applications.
The IRFD113PBF is a great choice for applications such as battery charging circuits, motor controls, pulse width modulation, radio frequency systems, switching power supplies, and LNB power supply circuits. It can be used with various voltage ranges including 5V to 30V.
The IRFD113PBF is a n-channel enhancement mode Field Effect Transistor (FET) that works based on the principle of high-frequency operation. The FET works by generating an electric field around its drain-source structure. The electric field produced by the FET creates a variable barrier between the source and the drain, resulting in a controlled flow of current. When a voltage is applied to the gate of the FET, it produces a positive or negative voltage between the source and the drain, allowing current to flow. The current flow is directly proportional to the voltage applied to the gate.
The IRFD113PBF is a very reliable and high-performing FET with a simple package design. It has an exceptionally low gate threshold voltage and a high current rating. Its design offers superior reliability and makes it ideal for medium to high-voltage applications. Due to its distinctive features and performance, the IRFD113PBF is a great choice for various applications.
The specific data is subject to PDF, and the above content is for reference
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