| Allicdata Part #: | IRFD014-ND |
| Manufacturer Part#: |
IRFD014 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 60V 1.7A 4-DIP |
| More Detail: | N-Channel 60V 1.7A (Ta) 1.3W (Ta) Through Hole 4-D... |
| DataSheet: | IRFD014 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | 4-DIP (0.300", 7.62mm) |
| Supplier Device Package: | 4-DIP, Hexdip, HVMDIP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 1.3W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 310pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 200 mOhm @ 1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1.7A (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IRFD014 is a type of FET (Field-Effect Transistor). It is classified as a single MOSFET, otherwise known as a metal-oxide-semiconductor field-effect transistor. This particular example of FET uses n-type (negatively charged) MOSFET technology with a drain to source voltage of 30V .
MOSFETs are a type of transistor commonly used in integrated circuit designs and they are often favored over other types of transistors due to their low power consumption, small physical size, and efficacy in handling high frequency signals. The IRFD014 is a good example of how powerful MOSFETs can be.
The IRFD014 has many applications and is most commonly used in digital logic circuits as a switch, power amplifier and voltage regulator. The device also has applications in small signal amplifier stages and voltage level sensing circuits. It is also used in power transistors and various industrial and consumer devices.
The working principle of the IRFD014 is fairly simple. It is a four-terminal device with the gate (G), the source(S), the drain(D) and the body. The gate terminal is placed between the source and drain and controls the voltage applied to the gate. This voltage then induces a current flow between the source and the drain, which can be used to switch the device on and off. In other words, the current flowing between the source and the drain is controlled by the voltage applied to the gate. The gate can be considered as the "on/off" switch of the device. The source is the input or input of the transistor and the gate is the output or output.
Before the current can flow between the source and the drain, the IRFD014 must be activated by the gate voltage. The gate voltage is usually about 1/4 to 1/2 of the drain to source voltage. This means that for a drain to source voltage of 30V, the gate voltage should be about 7.5 to 15V. Once the voltage is applied, the IRFD014 enables current to flow from the source to the drain. This current is called the drain current and is controlled by the optimized device layout and the gate voltage.
The IRFD014 is an important component in many areas of technology, and its ability to control current and voltage flow makes it a versatile component that can be used in a wide variety of applications. It is especially useful in digital logic circuits application since it can quickly switch on and off and remains in a low power state when not in use. It also has many applications in the power electronics field, where it control the flow of current and voltage to drive motors, lights, and other loads.
The IRFD014 is a powerful, yet potentially dangerous component. Improper use of the device can have devastating consequences, so it is important to use it responsibly and cautiously. A technician should have a wide range of knowledge about these components, as well as the proper safety measures when handling them.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| IRFD014PBF | Vishay Silic... | -- | 3099 | MOSFET N-CH 60V 1.7A 4-DI... |
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| IRFD9110 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 0.7A 4-D... |
| IRFD120PBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 1.3A 4-D... |
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| IRFD9120 | Vishay Silic... | -- | 300 | MOSFET P-CH 100V 1A 4-DIP... |
| IRFD420 | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 370MA 4-... |
| IRFD110 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 1A 4-DIP... |
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| IRFD310PBF | Vishay Silic... | -- | 1416 | MOSFET N-CH 400V 350MA 4-... |
| IRFD110PBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 1A 4-DIP... |
| IRFD9123 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 1A 4-DIP... |
| IRFD120 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 1.3A 4-D... |
| IRFD9113 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 600MA 4-D... |
| IRFD014 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 1.7A 4-DI... |
| IRFD9020PBF | Vishay Silic... | -- | 884 | MOSFET P-CH 60V 1.6A 4-DI... |
| IRFD213 | Vishay Silic... | -- | 1000 | MOSFET N-CH 250V 450MA 4-... |
| IRFD9220 | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 0.56A 4-... |
| IRFD224 | Vishay Silic... | -- | 1000 | MOSFET N-CH 250V 630MA 4-... |
| IRFD9014 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 1.1A 4-DI... |
| IRFD320 | Vishay Silic... | -- | 1000 | MOSFET N-CH 400V 490MA 4-... |
| IRFD9024 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 1.6A 4-DI... |
| IRFD9220PBF | Vishay Silic... | -- | 999 | MOSFET P-CH 200V 0.56A 4-... |
| IRFD9010PBF | Vishay Silic... | 1.04 $ | 3679 | MOSFET P-CH 50V 1.1A 4-DI... |
| IRFD9110PBF | Vishay Silic... | -- | 502 | MOSFET P-CH 100V 0.7A 4-D... |
| IRFD310 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 400V 350MA 4-... |
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| IRFD9210PBF | Vishay Silic... | -- | 536 | MOSFET P-CH 200V 0.4A 4-D... |
| IRFD024 | Vishay Silic... | 1.4 $ | 1000 | MOSFET N-CH 60V 2.5A 4-DI... |
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| IRFDC20PBF | Vishay Silic... | 0.78 $ | 1000 | MOSFET N-CH 600V 320MA 4-... |
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IRFD014 Datasheet/PDF