IRFDC20PBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	4-DIP (0.300", 7.62mm)
Supplier Device Package:	4-DIP, Hexdip, HVMDIP
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	350pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	18nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	4.4 Ohm @ 190mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	320mA (Ta)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IRFDC20PBF Application Field and Working Principle

IRFDC20PBF is a N-channel enhancement-mode field-effect transistor (FET) which is manufactured by International Rectifier Semiconductor Corporation. This FET is mainly used in low-voltage, low-power switching applications such as audio frequency amplifiers and digital integrated circuit chip sets.

General Overview of IRFDC20PBF

The IRFDC20PBF is built out of silicon and is designed to operate with a drain-source voltage of up to 20V. It has a maximum drain current of 2A and a gate-source voltage of ±20V. The FET has a maximum power dissipation of 0.5W. The temperature range for operating is from -55°C to +150°C and the storage temperature range from -55°C to +150°C.

Working Principle of IRFDC20PBF

The IRFDC20PBF works on the principle of field-effect transistor (FET). In a FET, the voltage applied to the gate terminal will affect the current flow between the drain and the source. When a positive gate voltage is applied, a channel of negatively charged carriers, known as electrons, will be created near the gate-drain interface. The electrons form a barrier to the current flow between the source and the drain since they can repel the positively charged carriers, known as holes, at the source. The resistance between the source and drain and hence the current flow can be regulated by changing the gate voltage. Voltage applied to the gate and drain terminals control the current in an enhancement-mode FET.When the gate voltage is negative and the source-drain current is low, the FET is in cutoff mode. In cutoff mode, the current flow between the source and the drain as well as between the gate and the drain is very low, resulting in an extremely high resistance between the sources and the drain.When the gate voltage is at a positive threshold level, the FET enters the active region. In the active region, the resistance between the source and the drain is much lower resulting in a much faster current flow. In addition, the amount of current flowing through the FET is also regulated by the gate voltage. A higher gate voltage results in an increased current, while a lower gate voltage results in a decreased current.

Application Fields of IRFDC20PBF

The IRFDC20PBF is mainly used in low-voltage, low-power switching applications such as audio frequency amplifiers and digital integrated circuit chip sets. It is employed in the audio technology for recording, amplify and playback. It can be used for high-gain amplifiers, audio drivers, current buffers, and linear drivers.In digital integrated circuits, the FETs are used as switches in logic circuits. They are used to switch between two states quickly, without consuming much power. They can be used to create logic gates like AND and OR gates.The IRFDC20PBF is also used in power conversion applications such as smart power switches, solid-state relays and motor controllers.

Advantages of IRFDC20PBF

The IRFDC20PBF has several advantages over other types of FETs such as: •It has an operating temperature range from -55°C to +150°C. •It has a low drain-source voltage of up to 20V. •It has a maximum drain current of 2A and a gate-source voltage of ±20V. •It has a maximum power dissipation of 0.5W. •It is used for low-power, low-voltage applications.•It is inexpensive, making it a popular choice for low-cost applications.

Conclusion

The IRFDC20PBF is a N-channel enhancement-mode field-effect transistor manufactured by International Rectifier Semiconductor Corporation. It is mainly used in low-voltage, low-power switching applications such as audio frequency amplifiers and digital integrated circuit chip sets. The FET has several advantages such as its operating temperature range, low drain-source voltage, maximum drain current, gate-source voltage, and maximum power dissipation. It is also an inexpensive transistor which makes it a popular choice for low-cost applications.

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