IRFD024PBF Allicdata Electronics
Allicdata Part #:

IRFD024PBF-ND

Manufacturer Part#:

IRFD024PBF

Price: $ 1.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 2.5A 4-DIP
More Detail: N-Channel 60V 2.5A (Ta) 1.3W (Ta) Through Hole 4-D...
DataSheet: IRFD024PBF datasheetIRFD024PBF Datasheet/PDF
Quantity: 6253
1 +: $ 0.94500
10 +: $ 0.83601
100 +: $ 0.66068
500 +: $ 0.51235
1000 +: $ 0.40449
Stock 6253Can Ship Immediately
$ 1.04
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

In the field of transistors, FETs and MOSFETs are widely used in various applications due to their excellent functional performance. In particular, the IRFD024PBF can provide a great deal of flexibility, making it ideal for various special applications. This article will discuss the application field and working principle of the IRFD024PBF.

The IRFD024PBF is a low voltage MOSFET, suitable for applications that require low input impedance, low operating power, and a high degree of reliability. This device is designed to be used in applications such as power supplies, motor controllers, and other related applications where low voltage is needed. Specifically, it is a single FET device, with a drain-source voltage of 60V, a drain current of 2A, and a gate threshold voltage of 2V.

One key advantage of this device is its ability to provide a high degree of current control, making it an ideal choice for applications that require precise and efficient power conversion. This device is also capable of providing a high degree of noise immunity, making it an ideal choice for sensitive electronic applications. The device also features an electrostatic discharge (ESD) protection, ensuring that it will be able to withstand high voltage transients.

The working principle of the IRFD024PBF is based on field effect transistor (FET) technology. FETs are transistors, which use an electric field to modify the amount of current that flows through the device. By applying an electric field, the FET can control the amount of current that flows through it, allowing it to act as a switch. This switch is controlled by the gate voltage, which can be adjusted to supply a variety of voltages and currents, allowing the device to operate in a wide range of applications.

In summary, the IRFD024PBF is an ideal choice for applications that require low input impedance, low operating power, and a high degree of reliability. The device is based on FET technology, and can provide a high degree of current control, making it an ideal choice for many applications. Additionally, the device offers an ESD protection and noise immunity, allowing it to be used in a wide range of sensitive electronic applications. For this reason, the IRFD024PBF is an excellent choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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