| Allicdata Part #: | IRFD120PBF-ND |
| Manufacturer Part#: |
IRFD120PBF |
| Price: | $ 0.67 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 100V 1.3A 4-DIP |
| More Detail: | N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-... |
| DataSheet: | IRFD120PBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.67000 |
| 10 +: | $ 0.64990 |
| 100 +: | $ 0.63650 |
| 1000 +: | $ 0.62310 |
| 10000 +: | $ 0.60300 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | 4-DIP (0.300", 7.62mm) |
| Supplier Device Package: | 4-DIP, Hexdip, HVMDIP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 1.3W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 360pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 270 mOhm @ 780mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1.3A (Ta) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IRFD120PBF is a Single-type Field Effect Transistor (FET). It is a semiconductor device that relies on an electromagnetic field to control the flow of electrical current from its source. By controlling the amount of current that flows through a circuit, FETs can be used for a variety of applications in modern electronics.
FETs have three major components that make up their structure: the source, gate and drain. The source is the “source” of current, where current flows from. The gate is between the source and drain, and provides a control mechanism for controlling the current flow. Finally, the drain is the “output” of the current, where current exits the FET.
The main difference between an FET and a conventional transistor is how the gate works. In a conventional transistor, the gate is a voltage-controlled switch that turns on and off the current flow, while in an FET, the gate is a voltage-controlled resistor (or capacitance if applicable). This allows an FET to control the flow of current, while also allowing it to “bias” the current, meaning it can set the voltage at which it begins to conduct energy.
The IRFD120PBF is a single-type FET, meaning that it has one gate, one source and one drain. It is a relatively small FET, with a maximum Ic rating of 12A, a maximum Vds rating of 60V, and a maximum Rds (on) rating of 2.5ohms. This makes the IRFD120PBF ideal for controlling high-current loads with low switching losses.
When it comes to application fields, the IRFD120PBF has many potential applications. It’s most commonly used to control the power in motor drives and industrial equipment, power supply circuits, analog circuits, and more. In terms of its working principle, the IRFD120PBF works by controlling the amount of current flowing through it. When the gate is at a low voltage, the FET is “off” and no current flows. When the gate voltage is increased, the FET switches “on” and current flows through. This process is repeated repeatedly in order to control a variety of functions in a circuit.
The IRFD120PBF is a reliable, powerful single-type FET that’s ideal for controlling high current loads with low switching losses. It’s most often used in motor drives and industrial equipment, power supply circuits, and analog circuits, and its working principle is that of controlling the amount of current that is able to flow through it. With its compact size and high performance, the IRFD120PBF is sure to continue to be a popular choice in many electronic applications.
The specific data is subject to PDF, and the above content is for reference
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IRFD120PBF Datasheet/PDF