Allicdata Part #: | IRFD310-ND |
Manufacturer Part#: |
IRFD310 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 400V 350MA 4-DIP |
More Detail: | N-Channel 400V 350mA (Ta) 1W (Ta) Through Hole 4-D... |
DataSheet: | IRFD310 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 4-DIP (0.300", 7.62mm) |
Supplier Device Package: | 4-DIP, Hexdip, HVMDIP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 170pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.6 Ohm @ 210mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 350mA (Ta) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRFD310 is a power MOSFET transistor. It is part of a large family of complementary MOSFET transistors designed to operate in various device types, such as enhancement-mode (normally-off) and depletion-mode (normally-on) as well as in Logic Level (gate-controlled) and medium voltage (analog).
The IRFD310 is a single-gate N-channel MOSFET transistor. It is a unipolar device, meaning that to operate it requires only positive gate and source voltages. It is an enhancement-mode (normally off) type of power MOSFET transistor and the gate-source switching action is controlled by a voltage input.
The IRFD310 is designed to work in 100V applications up to a continuous drain current of 8A. It has a low RDS(on), which is the resistance value between the drain and source and through which the current flows when the device is switched on. The device has a low drain-to-source capacitance called Cds, which helps to reduce the switching on time and improve response time.
The IRFD310 can be used in various applications, such as in switching power supplies, dc-dc converters, high efficiency audio amplifiers, computer power supply systems and so on. This transistor is a good choice for low-voltage applications with high-current requirements, as it can provide greater power handling capabilities than similar transistors.
In addition to its power handling capabilities, the IRFD310 also has very low gate charge and low gate-source leakage current. It can be used to reduce switching losses in power applications and provide faster response time. The IRFD310 is designed to have very good immunity against gate oscillation and ringing, ensuring that switching losses are minimized.
The working principle of the IRFD310 MOSFET transistor is based on the charge transfer from the gate to the drain by applying a suitable gate voltage. When the gate voltage is applied, the gate to source junction is turned on, allowing charge carriers (electrons and holes) to pass from the drain to the source. This causes the drain current to increase thereby providing the output power.
The IRFD310 is a high performance power MOSFET transistor that is suitable for many high voltage and low current applications. It provides high power handling capabilities and low switching losses, allowing for high efficiency and faster response time. It also has very good immunity against gate oscillation and ringing. With its versatile device types, wide power range and low on-resistance, the IRFD310 is an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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