IRFD214 Allicdata Electronics
Allicdata Part #:

IRFD214-ND

Manufacturer Part#:

IRFD214

Price: $ 1.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 250V 450MA 4-DIP
More Detail: N-Channel 250V 450mA (Ta) 1W (Ta) Through Hole 4-D...
DataSheet: IRFD214 datasheetIRFD214 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.92917
Stock 1000Can Ship Immediately
$ 1.03
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2 Ohm @ 270mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRFD214 Application Field and Working Principle

The high voltage and high power MOSFETs are widely used in the applications including power supplies, energy management systems, UPS systems, AC-DC converters and soft starters for motor control. The IRFD214 is categorized as a type of high voltage, high power MOSFETs. It is mainly used for industrial and consumer applications.

Application Field

The IRFD214 is a high power MOSFET that is built with a high voltage and high power rating. It is mainly used in consumer electronics, home appliance, communication and electric vehicle applications. The applications mainly include electric vehicle motor drives, DC/DC convertors, electric vehicle battery management, home appliance rectifiers and consumer electronics.

Moreover, the IRFD214 is also used in electric drilling motors, personal computers, digital projects, robots, & mobile phones.

Working Principle

The IRFD214 is an n-channel MOSFET which is composed of two n-type layers and two p-type layers. The source and drain regions of the MOSFET are connected to the n-layer, while the gate of the MOSFET is connected to the p-type layers. The basic working principle of the IRFD214 is based on the “channel” effect. When a voltage is applied between the source and the drain, and when a voltage is also applied between the gate and the source, a positively charged hole is created beneath the gate. This positively charged hole narrows the channel between the source and the drain, causing a decrease in the current flow.

The main characteristics of the IRFD214 include low on-state resistance and high current carrying capacity. The IRFD214 has a low on-state voltage drop, which results in high efficiency and less power dissipation. The high voltage and high power rating of the MOSFET make it suitable for a wide range of applications.

In order to make the most of the IRFD214, it is important to understand its work principle and characteristics. It is important to also consider the applications where it is mainly used. MOSFETs are reliable and easy to use devices, and are widely used in industrial and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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