IRFD420PBF

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IRFD420PBF is an N-channel enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET). It is an integrated switch and amplification element that is widely used in commercial products. The IRFD420PBF can be found in switching regulators, amplifiers and power pumps. As an advanced technology transistor, IRFD420PBF has a wide range of applications in the fields of power control, automotive electronics, communications, and photovoltaic inverters.

The IRFD420PBF has a rectangular 8-pin Dual-In-Line surface-mount package. Its power rating is up to 1.12W(Tamb=25 C). It supports drain voltage from -55V to 175V and gate voltage from -4.5V to 20V. It has a drain current of 0.4A at a drain-source voltage of 1V and a gate-source voltage of 5V. The current transfer ratio is between 0.7 and 1.5A/V.

The IRFD420PBF\'s threshold voltage is usually around 4V. At this voltage, the pinch-off voltage is reached and the drain current is near zero. The maximum output current can be obtained at the gate-source voltage of 10V. With the increasing of gate-source voltage, the current increase exponentially until reach the maximum output current. The drain-source voltage reaches its peak value at the same gate-source voltage and then the current starts to decrease.

The IRFD420PBF MOSFET works in its ON (introduction) state when voltage is applied to the gate-source terminal, creating an electric field between the metal gate and the metal oxide that covers the silicon substrate. This electric field attracts charge carriers (electrons or holes) from the silicon substrate to the surface of the metal oxide, thus creating conductivity between drain and source of the transistor. When the voltage is removed from the gate-source terminal, the electric field disappears and the transistor goes into the OFF (cut-off) state, which results in blocking the flow of current between source and drain.

An important point to consider when working with IRFD420PBF is the maximum power dissipation. Its maximum power dissipation can be calculated by multiplying the voltage of the drain-source terminal by the current flowing through the transistor. The power dissipation should stay below the maximum power rating of the transistor in order to avoid overheating.

In conclusion, the IRFD420PBF MOSFET is an excellent device for switching and amplification applications. It has a wide range of applications in commercial products, including switching regulators, amplifiers, and power pumps. Its drain current is 0.4A at a drain-source voltage of 1V and a gate-source voltage of 5V. With a maximum power dissipation of 1.12W, it is capable of performing outstandingly as a power control device.

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