Allicdata Part #: | IRFD9210-ND |
Manufacturer Part#: |
IRFD9210 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 200V 0.4A 4-DIP |
More Detail: | P-Channel 200V 400mA (Ta) 1W (Ta) Through Hole 4-D... |
DataSheet: | IRFD9210 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 4-DIP (0.300", 7.62mm) |
Supplier Device Package: | 4-DIP, Hexdip, HVMDIP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 170pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.9nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 240mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 400mA (Ta) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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.The IRFD9210 is a MOSFET device typically used as a switch in power control applications. It is a high voltage, low on-resistance P-channel MOSFET, designed for 14V operation and up to 1.5A. The IRFD9210 has an incredibly low on-resistance of 0.2Ω, making it suitable for switching high power loads at very low voltages. It is a single component component, meaning it is relatively simple to integrate into a system.
MOSFETs, or Metal Oxide Semiconductor Field-Effect Transistors, are one of the most important and commonly used components in modern electronics. They are used in a variety of applications, from simple power switches to complex logic circuits. The MOSFET is a three-terminal device and, given its high switching performance, is one of the most cost-effective components available.
The IRFD9210 MOSFET is a P-channel device, meaning it has a positively-charged source and a negatively-charged drain. When voltage is applied to the gate terminal, the gate of the FET attracts electrons from the source, and a channel is created between the source and drain. This channel allows current to pass from the source to the drain, thus allowing the MOSFET to act as a switch. The current through the channel is determined by several factors, such as the channel length, channel width, gate voltage, and on-resistance.
The IRFD9210 is most often used in power control applications, such as home appliance control, LED lighting, solar inverters, battery protection, and current regulation. The low on-resistance of the IRFD9210 makes it ideal for applications where efficiency is key, as it consumes very little power when switching is off. It is also suitable for high power applications, as it can support up to 1.5A of current. Moreover, the MOSFET is rated for a maximum voltage of 14V, meaning it can be used in a variety of different applications.
In addition to being used in power control, the IRFD9210 can also be used in high speed switching applications. As it has a very low switching time of 10nS, it is suitable for high frequency applications, such as motor control and communication systems.
In summary, the IRFD9210 is a high voltage, low on-resistance P-channel MOSFET device, typically used in power control and high speed switching applications. Its low on-resistance allows it to be used in higher power applications, and its rated voltage of 14V allows it to be used in a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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