Allicdata Part #: | IRFD9120PBF-ND |
Manufacturer Part#: |
IRFD9120PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 100V 1A 4-DIP |
More Detail: | P-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DI... |
DataSheet: | IRFD9120PBF Datasheet/PDF |
Quantity: | 2138 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 4-DIP (0.300", 7.62mm) |
Supplier Device Package: | 4-DIP, Hexdip, HVMDIP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.3W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 390pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 600mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRFD9120PBF is a silicon epitaxial planar N-Channel enhancement type MOSFET, which is designed for low voltage, low current and high speed switching applications. It has a maximum drain-source breakdown voltage of 100V, a total gate charge of 6nC, a drain-source on-state resistance of 1.5Ω, a continuous drain current of 87A, and an avalanche current rating of 175A. In addition, it has an optimum gate charge to drain-source on-resistance ratio, making it a powerful and reliable device for various applications.
The working principle of IRFD9120PBF is based on how the MOSFET functions. A MOSFET is a field-effect transistor that is controlled by an electric field, and is made up of two back-to-back p-type and n-type regions. A gate voltage is applied, which creates an electric field between the two regions. When the gate voltage increases, the electric field also increases and a reverse bias occurs, pulling holes away from the channel and thus turning off current flow. Similarly, when the gate voltage decreases, the electric field decreases, thus allowing current to flow through the channel again.
The most common application areas for IRFD9120PBF MOSFETs are in power supplies, motor drives, HVAC control, and LED lighting. These devices can also be used in high-current bridges and switches, which require high current density with low input and output capacitance. They are also used as drivers in switching regulators, synchronous rectifier and active snubber circuits. With their excellent performances, IRFD9120PBF MOSFETs are preferred over other types of MOSFETs, such as JFETs and Bipolar Junction Transistors.
The IRFD9120PBF is a silicon epitaxial planar N-Channel enhancement type MOSFET. It has a drain-source breakdown voltage of 100V and a total gate charge of 6nC. Its drain-source on-state resistance is 1.5Ω, a continuous drain current of 87A, and an avalanche current rating of 175A. It is used in power supplies, motor drives, HVAC control, LED lighting, high-current bridges, and switching regulators. It offers power efficiency, reliability and robustness, making it a suitable choice for various applications.
The specific data is subject to PDF, and the above content is for reference
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