IRFD9120PBF Allicdata Electronics
Allicdata Part #:

IRFD9120PBF-ND

Manufacturer Part#:

IRFD9120PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 100V 1A 4-DIP
More Detail: P-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DI...
DataSheet: IRFD9120PBF datasheetIRFD9120PBF Datasheet/PDF
Quantity: 2138
Stock 2138Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 600 mOhm @ 600mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRFD9120PBF is a silicon epitaxial planar N-Channel enhancement type MOSFET, which is designed for low voltage, low current and high speed switching applications. It has a maximum drain-source breakdown voltage of 100V, a total gate charge of 6nC, a drain-source on-state resistance of 1.5Ω, a continuous drain current of 87A, and an avalanche current rating of 175A. In addition, it has an optimum gate charge to drain-source on-resistance ratio, making it a powerful and reliable device for various applications.

The working principle of IRFD9120PBF is based on how the MOSFET functions. A MOSFET is a field-effect transistor that is controlled by an electric field, and is made up of two back-to-back p-type and n-type regions. A gate voltage is applied, which creates an electric field between the two regions. When the gate voltage increases, the electric field also increases and a reverse bias occurs, pulling holes away from the channel and thus turning off current flow. Similarly, when the gate voltage decreases, the electric field decreases, thus allowing current to flow through the channel again.

The most common application areas for IRFD9120PBF MOSFETs are in power supplies, motor drives, HVAC control, and LED lighting. These devices can also be used in high-current bridges and switches, which require high current density with low input and output capacitance. They are also used as drivers in switching regulators, synchronous rectifier and active snubber circuits. With their excellent performances, IRFD9120PBF MOSFETs are preferred over other types of MOSFETs, such as JFETs and Bipolar Junction Transistors.

The IRFD9120PBF is a silicon epitaxial planar N-Channel enhancement type MOSFET. It has a drain-source breakdown voltage of 100V and a total gate charge of 6nC. Its drain-source on-state resistance is 1.5Ω, a continuous drain current of 87A, and an avalanche current rating of 175A. It is used in power supplies, motor drives, HVAC control, LED lighting, high-current bridges, and switching regulators. It offers power efficiency, reliability and robustness, making it a suitable choice for various applications.

The specific data is subject to PDF, and the above content is for reference

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