Allicdata Part #: | IRFD220PBF-ND |
Manufacturer Part#: |
IRFD220PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 200V 800MA 4-DIP |
More Detail: | N-Channel 200V 800mA (Ta) 1W (Ta) Through Hole 4-D... |
DataSheet: | IRFD220PBF Datasheet/PDF |
Quantity: | 2366 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 4-DIP (0.300", 7.62mm) |
Supplier Device Package: | 4-DIP, Hexdip, HVMDIP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 260pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 480mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 800mA (Ta) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRFD220PBF is a high-voltage and low-drain depletion MOSFET, which belongs to the family of single FETs and MOSFETs. As an N-channel depletion device, this component is designed to be used in applications where a high voltage, low power operation is required. This type of component is ideal for sensing, isolation, motor control, and switching applications.
The IRFD220PBF is a highly integrated component that consists of a series of drain, source and gate terminals. The drain and source terminals are connected on opposite ends of the component, while the gate is connected between them. The component also includes an integrated protection diode which helps to protect the device from reverse biased current flow.
This component is capable of handling up to a 400 V rating and features an efficient power output. It is also capable of providing a low drain resistance RDS(on) of 5.2 mOhms, meaning it can operate with a lower power consumption while still providing a high output power. The component also has a low gate capacitance CGS and a maximum gate resistance Rg of 4 Ohms.
The IRFD220PBF is designed to operate in a wide range of temperatures and is capable of a high-temperature operation of up to 175°C. This versatile component also features a high noise immunity and a low speed startup, making it ideal for applications which require a fast response time. Furthermore, it has low conduction loss and stable handling characteristics, which makes it suitable for use in high frequency circuits.
The working principle of the IRFD220PBF is based on the MOSFET operating principle. When a small voltage is applied to the gate terminal, the channel width between the drain and the source is increased. As a result, a larger current can flow between the two terminals. This type of component is also capable of controlling the entire circuit current and can be used for pulse-width modulation applications.
The IRFD220PBF is a highly integrated component which is ideal for powering low voltage, low power applications. It is also suitable for use in a variety of applications including sensing, isolation, motor control and switching. For these applications, the IRFD220PBF provides a high-voltage and low-drain operation with an efficient power output, while its integrated protection diode helps to protect the component from reverse bias current flow.
The specific data is subject to PDF, and the above content is for reference
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