IRFH7446TR2PBF Discrete Semiconductor Products |
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Allicdata Part #: | IRFH7446TR2PBFCT-ND |
Manufacturer Part#: |
IRFH7446TR2PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N CH 40V 85A PQFN 5X6 |
More Detail: | N-Channel 40V 85A (Tc) 78W (Tc) Surface Mount 8-PQ... |
DataSheet: | IRFH7446TR2PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET®, StrongIRFET™ |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 85A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 98nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3174pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 78W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-PQFN (5x6) |
Package / Case: | 8-PowerTDFN |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IRFH7446TR2PBF is a N-channel logic level Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) specially designed for use in applications requiring low gate charge. It features fast switching, low on-state resistance, and improved performance through gate resistance when compared to other MOSFETs.
The IRFH7446TR2PBF is a single transistor in a P-type logic(P-channel) package. The device has a drain-source voltage rating of 100 V and a gate-source voltage rating of ±5 V. It is a logic level MOSFET, meaning that the gate-source threshold voltage is lower than the gate-source voltage at which the device will turn on. This device is designed for use in applications where low gate charge and fast switching is required.
The IRFH7446TR2PBF can be used in a broad range of applications such as DC/DC converters and power switching regulators. In dc/dc converters, the low gate charge enables the device to switch quickly, resulting in a higher power efficiency and reduced power consumption. In power switching regulators, the device uses a P-type logic package and its fast switching and low on-state resistance allow the user to control high current loads while still providing an efficient and reliable switching operation.
The working principle of this device is quite simple. When voltage is applied to the gate of the MOSFET, it creates a field effect which modifies the resistivity of the channel between the source and drain. When a positive voltage is applied to the gate, the channel is opened and current can be passed through the device. Conversely, when the gate voltage is removed, the channel is closed and no current can flow.
The IRFH7446TR2PBF is an ideal device for applications that require fast switching, low gate charge and improved performance with gate resistance when compared to other MOSFETs. Its fast switching and low on-state resistance make it suitable for DC/DC converters and power switching regulators, allowing the user to control high current loads with reliability and efficiency. Its underlying P-channel logic makes it a viable option for these applications and provides the same consistent performance.
The specific data is subject to PDF, and the above content is for reference
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