IRFH7110TR2PBF

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IRFH7110TR2PBF is a N-channel Power MOSFET from International Rectifier. It has a drain-source voltage of 100V, a Blocking voltage of 100V, a drain current of 12A and a drain-source resistance of 0.50 ohms. This makes it suitable for a wide range of applications, including use in power switching, high-voltage electronics and audio/video enthusiasts.The IRFH7110TR2PBF has a very simple construction. It is made of a highly doped n-type semiconductor substrate, a gate oxide, a gate contact and a drain-source area. The device is built using thermally enhanced low-resistance MOSFET technology, which gives it excellent current-handling capability and switching performance.The IRFH7110TR2PBF is a voltage-controlled device, meaning that the drain-source voltage will be controlled by the voltage applied to the gate. When the gate voltage is more positive than the source, the transistor will be “on” and the source-drain current will increase. Conversely, when the gate voltage is more negative than the source, the transistor will be “off” and the source-drain current will decrease.The IRFH7110TR2PBF has many advantages over other types of transistors, including a low on-state voltage drop, low gate charge and low output capacitance. It also has a low input capacitance and low gate-drain capacitance, making it a good choice for high-current and high-power applications.The IRFH7110TR2PBF is used in many different applications, including motor control and power switching. The device is also used in high-speed switching applications and video signal processing. It can also be used in audio and video enthusiasts applications, where it can provide excellent signal quality and low noise.Overall, the IRFH7110TR2PBF is a versatile and reliable device that is suitable for a variety of applications. The device’s superior current-handling capability and low-on state voltage drop makes it a great choice for power switching, motor control and high-speed switching applications. It is also suitable for audio and video enthusiast applications, where its low input capacitance and low gate-drain capacitance ensures excellent signal quality and low noise.

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