Allicdata Part #: | IRFH5302DTR2PBFCT-ND |
Manufacturer Part#: |
IRFH5302DTR2PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 29A 8VQFN |
More Detail: | N-Channel 30V 29A (Ta), 100A (Tc) 3.6W (Ta), 104W ... |
DataSheet: | IRFH5302DTR2PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.35V @ 100µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PQFN (5x6) Single Die |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 104W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3635pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 55nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 2.5 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 29A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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IRFH5302DTR2PBF is an enhancement mode Field Effect Transistor (FET). This device belongs to the category of power MOSFETs, specifically, it is part of the Advanced Power MOSFET lineup from International Rectifier (IR). Featuring voltage and current ratings of 30V and 10A respectively, it is a single-N-channel device.
IRFH5302DTR2PBF devices offer improved performance and reduced input capacitance. This makes them ideal for use in high-speed switching applications such as in telecommunications, industrial control, and power conversion. The transistor is also suitable for high-current switching, such as in residential and automotive applications. In addition, it is capable of withstanding high temperatures, which makes it suitable for use in high-temperature applications.
The transistor has a plastic package and is designed to provide an efficient power transfer. This allows for low power dissipation during switching operations. It also ensures lower gate-Source voltage requirements and low leakage during operations. Furthermore, its ultra-low input/output capacitance makes it suitable for high-frequency switching.
The working principle of the device is relatively simple. When a gate voltage is applied, electrons will be injected and the number of electrons in the channel region will increase. This results in a decrease in the channel resistance and the current starts to flow through the channel. The amount of current is determined by the gate voltage and the amount of electrons in the channel. When the voltage is increased, the electrons are injected further and hence the current increases as well.
The device can also be used in negative gate applications. In such cases, the electrons are repulsed by the gate and the current will be reduced. This type of switching operation is especially important for applications that require precision control such as in timing circuits.
The device is ideal for power MOSFET applications such as power management, motor control, industrial and automotive applications, or communication systems. It offers reliable, efficient performance, and reduces switching losses. It is also robust enough to withstand mechanical and environmental stresses, making it suitable for long-term applications.
The specific data is subject to PDF, and the above content is for reference
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