Allicdata Part #: | IRFH5300TR2PBFCT-ND |
Manufacturer Part#: |
IRFH5300TR2PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 40A PQFN |
More Detail: | N-Channel 30V 40A (Ta), 100A (Tc) 3.6W (Ta), 250W ... |
DataSheet: | IRFH5300TR2PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 1.4 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 2.35V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 7200pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 3.6W (Ta), 250W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PQFN (5x6) Single Die |
Package / Case: | 8-PowerVDFN |
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The IRFH5300TR2PBF is a N-channel MOSFET transistor. It is a vertical double diffused MOS (VMOS) FET designed for high-frequency and high-speed power switching applications. It is a three-terminal switching device with varying source, drain and gate voltage capabilities used to control the switching of loads such as motors and high powered LEDs. This device is widely used in power electronic applications such as motor control, inverter control, MIDI switching, solenoid/valve control and power controllers for battery operated devices. It is intended for low- to medium-current, low-voltage applications.
The IRFH5300TR2PBF is a vertical double diffused metal-oxide semiconductor field effect transistor (VMOSFET), which is mainly used for switching and power control applications. The main advantage of VMOSFETs over other types of FETs is that they have a high temperature tolerance, meaning they can be used in high temperature environments without worrying about damage to the device. The device consists of three terminals, Source, Drain, and Gate. Two back-to-back VMOSFETs of the same channel type are usually connected in order to form symmetrical V-MOSFETs.
The IRFH5300TR2PBF is designed to achieve high performance in a wide range of switching or power control applications. Its source and gate voltage capabilities allow for a wide range of switching speeds. The high frequency performance of the device is a result of its low capacitance between the source and drain. This allows for faster switching speeds than traditional transistors. The device also offers low on-resistance, making it suitable for high power applications.
The IRFH5300TR2PBF comes in a small TO-252 package. The small size and thin profile make it suitable for applications with space constraints. The package is also designed to reduce the device\'s exposed area, improving the device\'s thermal performance. This makes the device suitable for power control applications involving high power loads.
The device works by providing a voltage difference between the source and drain when a voltage is applied to the gate. This creates an electric field which causes current to flow from the source to the drain. The amount of current that can be induced depends on the voltage applied to the gate and the resistance between the source and drain.
The IRFH5300TR2PBF is an excellent choice for applications requiring efficient switching or power control, such as motor control, inverter control, MIDI switching and power controllers for battery operated devices. Its efficient switching capabilities and low on-resistance make it an ideal solution for applications with high power loads.
The specific data is subject to PDF, and the above content is for reference
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