IRFHM8330TRPBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRFHM8330TRPBF is a single FET from Vishay\'s siliconix power MOSFET family of devices. This specific FET is an N-channel enhancement type. This device is intended for use as an enhancement mode, gate-protected, large area, low-resistivity, low-threshold, low-voltage FET.

The IRFHM8330TRPBF has a wide range of applications and can be used in a variety of circuit designs. This device is suitable for use as a power switch in various switching applications and can also be used as an analog switch in DC to DC and AC to DC applications. It also has excellent power disapation and is ideal for high power applications.

The IRFHM8330TRPBF has an excellent power-to-area ratio and has a wide range of operational voltages, making it suitable for many different applications. It is ideal for both power switching and analog switching applications. The FET can be used to switch both high and low load currents, and can be used in low voltage applications, due to its low-threshold voltage.

The switching principle of the IRFHM8330TRPBF is dependent on the gate and source potentials. When the gate potential exceeds the source potential, the FET is switched on and the current flow through the channel is increased. When the gate potential is lower than the source potential, the channel current is reduced and the device is switched off. This process is reversed for reverse biased operation.

The IRFHM8330TRPBF has a wide range of features and benefits that make it an attractive choice for a variety of applications. It has low on-state losses and a low gate charge, which makes it energy efficient. It also has a wide range of drain current and drain-source voltage capabilities, making it a highly versatile device. Additionally, it has a fast switching speed, making it well suited for a variety of high speed applications.

The IRFHM8330TRPBF is an excellent choice for a variety of power and analog switching applications. It has a wide range of operational voltages, leading to excellent performance and energy efficiency. It is also fast switching, making it well suited for a variety of high-speed applications. Additionally, its wide range of drain-source voltages and currents make it highly versatile.

The specific data is subject to PDF, and the above content is for reference