Allicdata Part #: | IRFH7107TR2PBFCT-ND |
Manufacturer Part#: |
IRFH7107TR2PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 14A 8PQFN |
More Detail: | N-Channel 75V 14A (Ta), 75A (Tc) 3.6W (Ta), 104W (... |
DataSheet: | IRFH7107TR2PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 75V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Ta), 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 45A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3110pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.6W (Ta), 104W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-PQFN (5x6) |
Package / Case: | 8-PowerTDFN |
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IRFH7107TR2PBF is a silicon N-channel FMOS FET built as an advanced transistor technology based on an isolated skin-effect layout. The single MOSFET has a high on-state resistance, low leakage current, low input capacitance and good formability. All of these features help to make it a great choice for a variety of applications.In terms of the application field, IRFH7107TR2PBF is widely used in power switching, audio switching, SMPS converters and various DC to DC converters. It can also be used in applications such as automotive and lighting systems, AC motor drives, LED driver circuits and switches, and motor controllers. It can be used in a variety of applications, such as linear and low to moderate frequency switching.The working principle of IRFH7107TR2PBF is quite simple. It works by controlling the flow of electrons through the channel between two terminal. The gate is usually connected to a terminal which is connected to ground. When a current is applied to this terminal, the FET channel is opened or closed. When the channel is opened, electrons flow through the channel and the FET device is in a conducting state. When the channel is closed, the electrons cannot not flow and the FET device is in a non-conducting state.The structure of this device makes it highly efficient and dependable. The isolation skin effect layout allows for a low on-state resistance, minimal gate leakage current, low input capacitance and good formability. The low temperature coefficient ensures operation at higher voltages with minimal losses.The advantages of IRFH7107TR2PBF include low on-state resistance and low input capacitance. This feature makes it suitable for high-speed switching applications, as low on-state resistance leads to faster switching. Its low input capacitance also helps to reduce the area of components and reduce power consumption due to lower switching losses.The usage of this component is also quite simple. It can be integrated in a variety of circuits and the connections have to be made at the right points. It is available in various packages and can be interconnected in different ways according to circuit requirements.In conclusion, IRFH7107TR2PBF is a great choice for a variety of applications. It has a high on-state resistance, low leakage current, low input capacitance and good formability. It can be used in a variety of applications, such as power switching, audio switching, SMPS converters, and various DC to DC converters. The component is easy to use and can be integrated into different kinds of circuits. All these features make it a reliable component for efficient and reliable operation.
The specific data is subject to PDF, and the above content is for reference
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