IRFH7914TR2PBF

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IRFH7914TR2PBF is a power Field Effect Transistor (FET). It is a single N-Channel Enhanced FET, which is designed specifically for high power applications in a small surface-mount package. It is designed for mobile radio contactors, cellular phones, switches, low-noise amplifiers, and many other high-power applications requiring a fast switching speed.

This FET has a drain-source voltage maximum of 30V and a drain current maximum of 9A. It has a minimum gate threshold voltage of 4V and a maximum gate-source voltage of 18V. It also boasts of a maximum power dissipation of 20 W and an excellent noise immunity. Moreover, it has an insertion loss of 0.35 dB, and its thermal resistance from junction to ambient is 74 °C/W.

In terms of its application fields, IRFH7914TR2PBF is widely used in various fields. It is often seen in radio sets, cellular phones, switches, low-noise amplifier amplifiers, driver circuits, and other power circuits. It can also be used in interfaces of computers and communication equipment requiring fast operations and low power dissipation. Furthermore, this FET also finds its application in battery-powered devices as it facilitates low power consumption. Other applications of IRFH7914TR2PBF include DC-DC converters, phase control circuits, and motor control.

As far as the working principle of IRFH7914TR2PBF is concerned, the functionality of this FET is similar to a metal-oxide-semiconductor field-effect transistor (MOSFET). The FET utilizes an electrical current instead of a physical gate, hence eliminating the need of a physical collection of electrons. The current flowing through the device is controlled by the applied voltage at the gate-source. It behaves like a capacitor, storing charge and passing it through the gate when the necessary voltage is applied. It is one of the most efficient ways of controlling large currents in a circuit, as it interprets the changing voltage from the gate in order to control the current passing through the FET. This makes it ideal for power circuits, as it is able to handle large currents without any issue.

IRFH7914TR2PBF is an excellent power FET for high power applications and small surface-mount packages. It is capable of handling large currents and is able to effectively control them by reading the changing voltage at its gate. It is utilized in many different fields due to the many advantages it offers, such as its excellent noise immunity, low power dissipation, fast operation, and efficient operation. If you are looking for a reliable power FET for your next project, IRFH7914TR2PBF is an excellent choice.

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