IRFH3707TR2PBF

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The IRFH3707TR2PBF is a N-channel, enhancement-mode power field-effect transistor (FET) with a single gate and drain connections. This device builds on a silicon-gate MOSFET design, making it reliable and sturdy for high-power applications. Manufactured by the Infineon Technology corporation, the IRFH3707TR2PBF is identified by its model number and is part of the wattRESET Smart Power Technology portfolio.

Typical applications of this IRFH3707TR2PBF transistor include motor control, power supply, lighting, motor control, and motor phase applications. Additionally, it is suitable for any N-channel power FET applications in the automotive, wireless, industrial and consumer markets. Furthermore, it is also suitable for applications such as current sensing, battery management, LED lighting, and power conversion.

This discrete power FET is packaged in a lead(Pb)-free 2mm x 2mm surface mount package with 12 pins. It has a drain-source voltage of 30 V and a maximum drain current of 3.8 A. It also features on-state RDS(on) at an operating temperature of -55 °C to 150 °C and an ESD rating of 2 kV minimum.

The working principle of the IRFH3707TR2PBF is based on the MOSFET architecture. It is composed of a metal oxide semiconductor (MOS) stack with insulating layers and a metal gate on top. This MOS stack controls the flow of current between the source and drain terminals. When a positive voltage is applied to the gate, it attracts electrons which creates a conductive channel between the source and drain. This creates a controllable current flow through the transistor.

Additionally, the IRFH3707TR2PBF also has a high-side and low-side temperature protection feature. This feature helps protect the transistor from thermally related over-currents, which can be caused by the excessive operation of the MOSFET. This protection feature helps increase the reliability and life of the device.

The IRFH3707TR2PBF is a reliable, sturdy MOSFET-based power field-effect transistor that is suitable for a wide range of applications. It has a maximum drain current of 3.8 A and a drain-source voltage of 30 V. Additionally, it also has high-side and low-side temperature protection, which helps to prevent short-term and long-term over-currents in the device. It is available in a Pb-free 2mm x 2mm surface mount package with 12 pins.

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