Allicdata Part #: | IRFH5220TRPBF-ND |
Manufacturer Part#: |
IRFH5220TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 200V 3.8A PQFN |
More Detail: | N-Channel 200V 3.8A (Ta), 20A (Tc) 3.6W (Ta), 8.3W... |
DataSheet: | IRFH5220TRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | 8-VQFN Exposed Pad |
Supplier Device Package: | PQFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 8.3W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1380pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 99.9 mOhm @ 5.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.8A (Ta), 20A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRFH5220TRPBF is a kind of Power MOSFETs. It is a high-voltage N-Channel Enhancement Mode MOSFETs utilizing the latest MOSFET technology, specially made for high-grade system requirements. This device is superior in its Unclamped Inductive Switching (UIS) performance and high ruggedness. It features low gate charges, fast switching speed and 100°C Operating Temperature.
The application field of IRFH5220TRPBF is broad and flexible. It can be applied in low voltage, high power DC-DC, DC-AC conversion, OR and other high voltage application. Generally, it is for DC Motor Control, DC Contactors, DC-DC Convertors, Power Supply, DC-AC Converters, Lighting, Automotive and other Industrial applications.
When it comes to the working principle of IRFH5220TRPBF, it is based on the fact that when a correct voltage is applied to the Gate terminal of the MOSFET, the MOSFET gets activated and it passes current from drain terminal to the source terminal. As the gate voltage rises, more current is allowed to pass through to the source terminal, making the MOSFET even more active.
The Source Terminal of IRFH5220TRPBF is connected to the negative terminal of the power supply. Then the Drain Terminal is connected to the positive terminal. By applying voltage through the Gate terminal, the MOSFET gets active and the current passes through the Drain terminal to the Source terminal. This way the current is controlled with the Gate Voltage.
It is obvious that IRFH5220TRPBF is a type of Power MOSFETs, using state of the art technology to provide superior performance in high voltage applications. It offers unclamped inductive switching and has a 100°C operating temperature, with low gate charge and fast switching speed.
It is widely used in various applications such as motor control, power supply, DC-DC converters and lighting. It operates by the principle of applying volts to the gate terminal, thus increasing the amount of current that can pass through the MOSFET drain terminal to the Source terminal.
The specific data is subject to PDF, and the above content is for reference
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