IRFHM4231TRPBF Discrete Semiconductor Products |
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Allicdata Part #: | IRFHM4231TRPBFTR-ND |
Manufacturer Part#: |
IRFHM4231TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 40A PQFN |
More Detail: | N-Channel 25V 40A (Tc) 2.7W (Ta), 29W (Tc) Surface... |
DataSheet: | IRFHM4231TRPBF Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.4 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 35µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1270pF @ 13V |
FET Feature: | -- |
Power Dissipation (Max): | 2.7W (Ta), 29W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-PQFN (3x3) |
Package / Case: | 8-PowerTDFN |
Base Part Number: | IRFHM4231 |
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?The IRFHM4231TRPBF is a transistor-based device that is used as an active switch in applications that require a large current capacity. This type of transistor is a field-effect transistor (FET), more specifically a metal-oxide semiconductor field-effect transistor (MOSFET), and a single transistor. As such, it is more versatile and efficient than other types of field-effect transistors, both with respect to their electrical characteristics and the ability to switch from one state to another.
The IRFHM4231TRPBF is used in high power applications and is suitable for switching current loads of up to 10A at source-drain voltages of up to 70V. It features a low on-state resistance and a high breakdown voltage and it is resistant to thermal and electrical stress. Because of this, it is suitable for high power applications such as DC-DC converters, switch mode power supplies, controllers and other high power circuits.
The IRFHM4231TRPBF has three main pins: gate, drain and source. The gate is connected to the transistor\'s control terminal and is used to turn the transistor on and off. This works by varying the amount of current flowing through the gate and thus controlling the flow of current through the transistor. The drain and source pins are used to connect the transistor to the power supply and load. When the transistor is turned on, current will flow from the source to the drain. When the transistor is turned off, current cannot flow from the source to the drain.
The basic working principle of the IRFHM4231TRPBF can be explained as follows: When the gate voltage is greater than the threshold voltage, the transistor\'s operation changes from non-conductive to conductive. This process is known as saturation and it allows the transistor to carry a high current from the source to the drain. Conversely, when the gate voltage decreases below the threshold voltage, the transistor switches from a conductive to a non-conductive state, which is known as the "off" state.
The body diode is another important aspect of the IRFHM4231TRPBF. This diode is connected between the drain and the source and its function is to act as a protection device, by providing a path for current to flow in the event of a reverse voltage situation. This diode also helps to limit the peak transient voltage and reduce the risk of electrical overstress.
In summary, the IRFHM4231TRPBF is a transistor-based device that is used as an active switch in applications that require high power, current and voltage capacity. It is a metal-oxide semiconductor field-effect transistor (MOSFET) and a single transistor and it is used in high power applications such as DC-DC converters, switch mode power supplies and controllers. The working principle of this type of transistor involves the threshold voltage at which the operation changes from non-conductive to conductive, and the body diode helps to protect the device from reverse voltage and transient voltage.
The specific data is subject to PDF, and the above content is for reference
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