IRFH8321TRPBF

Vgs(th) (Max) @ Id:	2V @ 50µA
Package / Case:	8-TQFN Exposed Pad
Supplier Device Package:	PQFN (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.4W (Ta), 54W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2600pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	59nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	4.9 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	21A (Ta), 83A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The IRFH8321TRPBF is a single N-channel enhancement MOSFET developed by International Rectifier Corporation. It has high breakdown voltage, fast switching speed and low on-state resistance. It is a low-threshold, low-power 400V N-channel MOSFET suitable for use in switching application, providing good thermal performance and high-frequency switching.

Application Field

The IRFH8321TRPBF is suitable for many applications such as switching power supplies, DC-DC converters, low-voltage circuits, Schottky diode isolators and cross-point switches. This device can be found in high-reliability instrumentation applications like radios, medical and industrial equipment, as well as in high frequency switching applications, such as telecom products, automotive antilock brakes, circuit protection, and general-purpose digital circuits.The IRFH8321TRPBF can also be used for temperatures up to 125°C and can operate in the frequency range of kHz to GHz.

Working Principle

A MOSFET is an electronic component that is used to control current in both AC and DC circuits. The IRFH8321TRPBF is an enhancement mode MOSFET that is used in switching applications, as it has an extremely low on-state resistance. When no voltage is applied to the gate, the MOSFET is in its off-state. In this state, the MOSFET acts like an open switch, and no current is allowed to flow through it. When a voltage is applied to the gate, the internal structure of the MOSFET changes, allowing current to flow through the channel. This is the on-state of the MOSFET, and corresponds to the switch being closed.The IRFH8321TRPBF has a low threshold voltage, meaning that it can be switched off with weaker gate signals than other MOSFETs. This is important in power circuitry, where it increases the efficiency of the circuit, as more energy is not lost in operating the gate.

Features

One of the main features of the IRFH8321TRPBF is its low on-state resistance. This is measured in Ohms and is a measure of the resistance when the device is in its on-state. A lower resistance means that more current can flow through the device, allowing for higher voltages and currents to be switched, making it suitable for high power applications.The IRFH8321TRPBF also has high breakdown voltage and a fast switching speed. This makes it well suited for switching applications, as the device will not be damaged by sudden spikes of current, and can switch quickly. The high breakdown voltage also increases the allowable range of voltage that can be used with the device.

Advantages

The IRFH8321TRPBF has many advantages over other MOSFETs of the same family and other NFETs. It has a high breakdown voltage, making it suitable for high voltage applications, as well as a low on-state resistance and fast switching speed. These features make the IRFH8321TRPBF a suitable choice for many different applications. The low on-state resistance also helps to improve the efficiency of circuits, as less power is lost in switching the device. The fast switching speed also means that more precise timing and control can be achieved in applications such as DC-DC converters and other power electronics.

Conclusion

The IRFH8321TRPBF is a single N-channel enhancement MOSFET developed by International Rectifier Corporation. It has high breakdown voltage, fast switching speed and low on-state resistance, making it well suited for many applications. It is particularly suited for switching power supplies, DC-DC converters, low-voltage circuits, Schottky diode isolators and cross-point switches, and can operate in temperatures up to 125°C. The low on-state resistance, combined with its high breakdown voltage, allow it to be used in high power applications and also helps to increase the efficiency of the circuit.

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