Allicdata Part #: | IRFH7545TRPBFTR-ND |
Manufacturer Part#: |
IRFH7545TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 85A 6-PQFN |
More Detail: | N-Channel 60V 85A (Tc) 83W (Tc) Surface Mount PQFN... |
DataSheet: | IRFH7545TRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.7V @ 100µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PQFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3890pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | StrongIRFET™ |
Rds On (Max) @ Id, Vgs: | 5.2 mOhm @ 51A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 85A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRFH7545TRPBF is a Standard Gate FET with a dramatic switching speed. The device is a very low-noise MOSFET with a much lower gate-source capacitance than other devices. The FET is not only capable of high-speed pulsed operation, but also provides excellent immunity to temperature and voltage variations. This device is a great choice for anyone looking for a reliable, high-speed switch for a wide range of applications.
Application Field
The IRFH7545TRPBF is commonly used in many different applications. It can be used in any high-frequency switching application where a high speed, low voltage switch is needed. The device is well suited for switching both AC and DC signals, and can be used in automotive, industrial, communication, and audio applications. It is also used in high power switching applications, such as motor control and power amplification. In addition, the device can be used for power management, such as for voltage regulation or battery management.
Working Principle
The IRFH7545TRPBF is based on a metal-oxide-semiconductor-field-effect-transistor (MOSFET) structure. In this type of device, a thin layer of metal is used to form an insulator between a gate and a source. This layer is then used to control the flow of electrons, allowing the FET to operate as a switch. When gate voltage is applied to the FET, the electrons in the source are allowed to move between the gate and the source terminals. This results in current flowing through the source, and the FET is then said to be in the on state. Conversely, when gate voltage is removed, the electrons in the source are not allowed to move, and current is not allowed to flow. In this state, the FET is said to be in the off state.
In addition to the on/off switching, the IRFH7545TRPBF is also capable of pulse-width modulation. This type of modulation allows for a variety of applications, such as controlling the speed of motors, providing current or voltage regulation, or providing power control in power supply circuits. This device is also capable of providing high-frequency switching, requiring only nanosecond switching times for the on/off operation. Furthermore, the device has excellent immunity to both temperature and voltage variations, making it very reliable in a wide range of applications.
Overall, the IRFH7545TRPBF is an ideal FET for any application that requires a high-speed, low-voltage switch. The device combines high-speed switching and excellent temperature and voltage impedance, making it an excellent choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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