Allicdata Part #: | IRFH5250DTR2PBFCT-ND |
Manufacturer Part#: |
IRFH5250DTR2PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 40A 8VQFN |
More Detail: | N-Channel 25V 40A (Ta), 100A (Tc) 3.6W (Ta), 156W ... |
DataSheet: | IRFH5250DTR2PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.35V @ 150µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-PQFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 156W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6115pF @ 13V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 83nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 1.4 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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IRFH5250DTR2PBF is one of the most popular Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) in the world. It is widely used in various industries due to its outstanding performance and reliability. The IRFH5250DTR2PBF has a variety of applications, ranging from computer to industrial electronics and automotive, and is one of the most commonly used FETs and MOSFETs. In this article, we will discuss the application fields of IRFH5250DTR2PBF and its working principle.
The IRFH5250DTR2PBF is a two-terminal, three-level rectifier optimized for applications requiring high power and low on-state resistance. It is typically used in high-power circuits, including automotive, computer and industrial electronics. The part also features an extremely low input capacitance and a fast switching time, making it an ideal choice for high-density, high-speed circuits. The IRFH5250DTR2PBF also features low drain-source on-state resistance (RDS(on)), which helps to reduce the power dissipation and is essential for the operation of low-voltage input devices. The part also exhibits excellent temperature performance and can be used in temperature sensitive applications.
The working principle of the IRFH5250DTR2PBF is based on a two-terminal, three-level rectifying system. Basically, the IRFH5250DTR2PBF has a source terminal, a gate terminal, and a drain terminal. When the source and gate terminals are connected, a voltage is applied across the device, which creates a field effect in the semiconductor material between the gate and source terminals. The created field effect causes a current to flow through the device, which is then converted into an output voltage at the drain terminal. The voltage output of the IRFH5250DTR2PBF depends on the gate-source voltage, with higher gate-source voltages providing higher voltage outputs.
The IRFH5250DTR2PBF is a great choice for high-power, high-reliability applications due to its low on-state resistance and fast switching time. The part is well-suited for automotive, industrial, and computer applications, and its low input capacitance allows it to be used in high-density, high-speed circuits with ease. Its small size and rugged construction make it a durable and reliable solution for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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