Allicdata Part #: | IRFH5255TR2PBFCT-ND |
Manufacturer Part#: |
IRFH5255TR2PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 15A 8VQFN |
More Detail: | N-Channel 25V 15A (Ta), 51A (Tc) 3.6W (Ta), 26W (T... |
DataSheet: | IRFH5255TR2PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.35V @ 25µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-PQFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 26W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 988pF @ 13V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14.5nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta), 51A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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IRFH5255TR2PBF is an N-channel enhancement-mode Metal Oxide Semiconductor Field Effect Transistor (MOSFET). IRFH5255TR2PBF has high current carrying capability which allows it to be used in various applications such as switching, amplifying and level shifting. Its low gate threshold voltage and fast switching time allows its use in high speed digital circuits.
The IRFH5255TR2PBF is designed for use in low voltage, low current and low power applications such as display drivers, lighting controls and automotive electronics. It combines high voltage capability and excellent ruggedness in a small package.
The IRFH5255TR2PBF offers a wide voltage range of -2.5 to +19V and includes a built-in Zener diode which provides the reverse polarity protection. The low RDS(on) of 4.3 mΩ and fast switching time makes it suitable for high speed digital circuits. It also offers a low input and output capacitance which makes it suitable for high frequency applications.
The working principle of IRFH5255TR2PBF is based on the transistor principle. When a voltage is applied to the gate of the transistor, the conductivity of the semiconductor channel is modified and this leads to the flow of electrons from the source to the drain. The current that flows from the source to the drain is known as the drain current and this current is proportional to the gate voltage.
Due to the low on-state resistance of IRFH5255TR2PBF, it has low power loss and it is widely used in consumer and automotive electronics. It is also used for switch mode power supplies, battery chargers, motor control and DC/DC converters.
The fast switching time of the IRFH5255TR2PBF makes it ideal for high speed applications in consumer electronics and computers. Its low gate threshold voltage allows it to be used in low voltage applications and its high current carrying capability makes it suitable for various power applications.
In conclusion, the IRFH5255TR2PBF is an N-channel enhancement-mode MOSFET which is widely used in various applications such as switching, amplifying and level shifting. Its low on-state resistance and fast switching time makes it suitable for high speed applications. It is also used for low voltage and low current applications such as display drivers, lighting controls and automotive electronics.
The specific data is subject to PDF, and the above content is for reference
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