IRFH8307TRPBF

Vgs(th) (Max) @ Id:	2.35V @ 150µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-PQFN (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.6W (Ta), 156W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7200pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	120nC @ 10V
Series:	HEXFET®, StrongIRFET™
Rds On (Max) @ Id, Vgs:	1.3 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	42A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The IRFH8307TRPBF is an HEXFET power MOSFET developed to improve upon current industry standards for performance, cost and reliability. The IRFH8307TRPBF has been designed to provide a higher level of performance than traditional FETs, as well as having a lower power consumption and improved overload capability. This makes it an ideal choice for a wide range of applications, from high-performance consumer electronics to industrial applications.The IRFH8307TRPBF has an advanced silicon MOSFET (Metal Oxide Semiconductor Field Effect Transistor) design, which allows it to operate at higher frequencies and voltages. The MOSFET is composed of source and drain leads, which are connected to the substrate of the transistor and are then charged with a voltage or voltage divider. The voltage applied to the leads is the gate voltage, which controls the flow of current.The structure of the IRFH8307TRPBF is extremely simple, lending it significant advantages over more traditional transistors and FETs. For example, its construction eliminates the need for additional transistors, which often add cost and complexity to the overall design of the circuit. Furthermore, its small size and low profile allows the use of up to six MOSFETs in the same circuit, enabling higher efficiency and lower power consumption.The IRFH8307TRPBF can be used for a wide range of applications, ranging from high-performance consumer electronics to industrial applications. For example, in power amplifiers, the MOSFETs are used in bridges to ensure the maximum possible output power. In audio applications, the MOSFETs can be used to improve sound quality and reduce noise levels, and in motor control applications, they are used to switch circuit elements with high efficiency and low power consumption.Additionally, the IRFH8307TRPBF is also useful for applications that require tight control of the switching speed or rise time. This is because the MOSFET has a very fast switching time, typically about 2 nanoseconds, which is faster than most other FET models. This makes the IRFH8307TRPBF a great choice for those applications that require rapid switching.The IRFH8307TRPBF also has a high breakdown voltage and can withstand voltages up to 55 volts. This allows the MOSFET to be used in a wide range of applications and devices, such as motor controllers, power supplies and motor drive circuits.In addition to its fast switching time, the IRFH8307TRPBF also offers excellent thermal characteristics, with a low thermal resistance and low gate charge. This makes the MOSFET highly suitable for applications that require fast thermal response times, such as in switching mode power supplies, motor control circuits and audio amplifiers.Overall, the IRFH8307TRPBF is an excellent choice for modern design engineers due to its versatility, high performance, low cost and exceptional thermal characteristics. Its fast switching time and low gate charge make it ideal for a wide range of applications, from high-performance consumer electronics to industrial applications. Furthermore, its small size and low profile are also beneficial for use in multiple device designs.

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