IRFH7936TRPBF Discrete Semiconductor Products

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IRFH7936TRPBF transistors consist of four independent N-channel MOSFETs, designed to replace CD4007 and CD4011b devices in wide range of applications. They are well suited to low level analog and digital switching, amplification, RF , and telecommunication.

The IRFH7936TRPBF are offered in a space-saving SO-8 It is also available in a SO-56 package for greater output current capacity (IRL]7934TRPBF).

These transistors are part of a family of N-channel MOSFETs from International Rectifier® that provide maximum power output with low on-resistance (RDS(ON)). Other features include:

• 30V VDS (IRFH7934) and 20V VDS (IRLH7936) rating
• ½ the on-resistance of other power MOSFETs
• Low gate threshold for easy switching
• Design flexibility with low RDS(ON) and fast switching
• High gain (AVD) for low noise and distortion

These devices are also referred to as N-channel enhanced mode field effect transistors or just MOSFETs. MOSFETs provide a low RDS(ON), low temperature switching capability, and high gain (AVD), making them suitable for many applications. They are commonly used in logic circuits, power amplifiers, switching circuits, and power converters. In addition, they can be used as low-frequency switches and amplifiers in radio frequency (RF) and microwave applications.

The IRFH7936TRPBF and IRLH7936TRPBF transistors are suitable for use in applications that require low-level analog as well as digital switching, amplification and RF telecommunication. Sensitive circuits benefit from their low gate threshold, which means they can be triggered by relatively low voltages. This makes them ideal for sensitive electronics, such as digital and analog sensors, which are typically used in applications with low-level currents.

The IRFH7936TRPBF and IRLH7936TRPBF transistors are also advantageous in amplifier or switching regulator applications. Their low RDS(ON) means that the power output is maximized, and the low gate threshold means that they can operate in a wide range of input voltages. They are also capable of delivering very high-frequency pulses, which makes them well-suited for low-energy, fast switching applications.

In summary, the IRFH7936TRPBF and IRLH7936TRPBF transistors are versatile, capable of providing performance in a variety of applications. Their low RDS(ON) and low gate threshold make them suitable for high gain (AVD) applications, their high speed makes them suitable for low energy, fast switching applications, and their low temperature switching capability makes them suitable for sensitive analog and digital applications.

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